STW26NM60 STMicroelectronics

STW26NM60N N-channel 600 V, 0.135 typ., 20 A MDmesh II Power MOSFETs in a TO-247 package Datasheet - production data Features Order code V R max I DS DS(on) D STW26NM60N 600 V 0.165 20 A 100% avalanche tested Low input capacitance and gate charge 3 2 Low gate input resistance 1 TO-247 Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high * efficiency converters. 6 6& Table 1. Device summary Order code Marking Packages Packaging STW26NM60N 26NM60N TO-247 Tube September 2013 DocID025246 Rev 1 1/13 This is information on a product in full production. www.st.comContents STW26NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/13 DocID025246 Rev 1