X-On Electronics has gained recognition as a prominent supplier of STW26NM60 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW26NM60 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STW26NM60 STMicroelectronics

STW26NM60 electronic component of STMicroelectronics
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Part No.STW26NM60
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STW26NM60 MOSFET N-CH 600V 30A TO-247
Datasheet: STW26NM60 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.32 ea
Line Total: USD 7.32 
Availability - 44
Ship by Mon. 23 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
44
Ship by Mon. 23 Dec
MOQ : 1
Multiples : 1
1 : USD 7.32
25 : USD 3.66
50 : USD 3.294
75 : USD 2.745
100 : USD 2.4705

   
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Id - Continuous Drain Current
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STW26NM60 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STW26NM60 and other electronic components in the MOSFETs category and beyond.

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STW26NM60N N-channel 600 V, 0.135 typ., 20 A MDmesh II Power MOSFETs in a TO-247 package Datasheet - production data Features Order code V R max I DS DS(on) D STW26NM60N 600 V 0.165 20 A 100% avalanche tested Low input capacitance and gate charge 3 2 Low gate input resistance 1 TO-247 Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high * efficiency converters. 6 6& Table 1. Device summary Order code Marking Packages Packaging STW26NM60N 26NM60N TO-247 Tube September 2013 DocID025246 Rev 1 1/13 This is information on a product in full production. www.st.comContents STW26NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/13 DocID025246 Rev 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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