STW56N60DM2 STMicroelectronics

STW56N60DM2 N-channel 600 V, 0.052 typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on) Order code V I P DS D TOT max. STW56N60DM2 600 V 0.060 50 A 360 W Fast-recovery body diode 3 Extremely low gate charge and input 2 capacitance 1 Low on-resistance 100% avalanche tested TO-247 Extremely high dv/dt ruggedness Zener-protected Figure 1: Internal schematic diagram Applications D(2) Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr G(1) and time (t ) combined with low R , rendering rr DS(on) it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packing STW56N60DM2 56N60DM2 TO-247 Tube June 2015 DocID026982 Rev 3 1/12 www.st.com This is information on a product in full production. Contents STW56N60DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-247 package information ............................................................. 9 5 Revision history ............................................................................ 11 2/12 DocID026982 Rev 3