STW56N65M2-4 STMicroelectronics

STW56N65M2-4 N-channel 650 V, 0.049 typ., 49 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V R max I DS DS(on) D STW56N65M2-4 650 V 0.062 49 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested Zener-protected 2 7 Applications Figure 1. Internal schematic diagram Switching applications UDLQ Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance *DWH and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. 3RZHU ULYHU VRXUFH VRXUFH 0 Y = Table 1. Device summary Order code Marking Package Packaging STW56N65M2-4 56N65M2 TO247-4 Tube December 2014 DocID027307 Rev 1 1/12 This is information on a product in full production. www.st.comContents STW56N65M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 4.1 TO247-4, STW56N65M2-4 9 5 Revision history . 11 2/12 DocID027307 Rev 1