Product Information

STY80NM60N

Name: STY80NM60N
Brand: STMicroelectronics
SKU: STY80NM60N_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STY80NM60N electronic component of STMicroelectronics

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Datasheet

Transistor: N-MOSFET; unipolar; 600V; 46A; 447W; MAX247

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 11.9455 ea
Line Total: USD 11.95

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Mon. 27 May to Fri. 31 May MOQ : 1 Multiples : 1 STY80NM60N STMicroelectronics	1 : USD 13.7196 3 : USD 12.558

0 - WHS 2 Ships to you between Mon. 27 May to Fri. 31 May MOQ : 1 Multiples : 1 STY80NM60N STMicroelectronics	1 : USD 11.9455

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Additional Infomation About Product

STY80NM60N N-channel 600 V, 0.030 , 74 A, MDmesh II Power MOSFET Max247 Features V DSS Type R max I DS(on) D T Jmax STY80NM60N 650 V < 0.035 74 A The worldwide best R in Max247 DS(on) 3 2 100% avalanche tested 1 Low input capacitance and gate charge Max247 Low gate input resistance Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order code Marking Package Packaging STY80NM60N 80NM60N Max247 Tube July 2011 Doc ID 14210 Rev 6 1/12 www.st.com 12Contents STY80NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 14210 Rev 6

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
Mounting Tht Tht
Case Max247 Max247
Kind Of Package TUBE TUBE
Polarisation Unipolar Unipolar
Type Of Transistor N - Mosfet N - Mosfet
Drain-Source Voltage 600 V 600 V
Drain Current 46 A 46 A
Gate-Source Voltage 25 V 25 V
On-State Resistance 35 mOhms 35 mOhms
Power Dissipation 447 W 447 W