SUD50N04-8m8P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0088 at V = 10 V 50 GS TrenchFET Power MOSFET 40 16 nC 0.0105 at V = 4.5 V 50 GS 100 % UIS Tested 100 % R Tested g PWM Optimized Compliant to RoHS Directive 2002/95/EC APPLICATIONS LCD Display Backlight Inverters TO-252 DC/DC Converters D G Drain Connected to Tab GD S Top View S Ordering Information: SUD50N04-8m8P-4GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 40 DS V Gate-Source Voltage V 20 GS a T = 25 C 50 C T = 70 C 44 C Continuous Drain Current (T = 150 C) I J D b T = 25 C 14 A b T = 70 C 11.2 A A Pulsed Drain Current I 100 DM T = 25 C 40 C Continuous Source-Drain Diode Current I S b T = 25 C 2.6 A I Single Pulse Avalanche Current 30 AS L = 0.1 mH E mJ Avalanche Energy 45 AS T = 25 C 48.1 C T = 70 C 30.8 C Maximum Power Dissipation P W D b T = 25 C 3.1 A b T = 70 C 2.0 A T , T C Operating Junction and Storage Temperature Range - 55 to 150 J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b Steady State R Maximum Junction-to-Ambient 32 40 thJA C/W Steady State R Maximum Junction-to-Case 2.1 2.6 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. Document Number: 68647 www.vishay.com S10-0109-Rev. B, 18-Jan-10 1SUD50N04-8m8P Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 40 V DS GS D V Temperature Coefficient V /T 44 DS DS J I = 1.0 mA mV/C D V Temperature Coefficient V /T - 5.9 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 3.0 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 40 V, V = 0 V, T = 70 C 20 DS GS J a On-State Drain Current I V 5 V, V = 10 V 50 A D(on) DS GS V = 10 V, I = 20 A 0.0069 0.0088 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 15 A 0.0084 0.0105 GS D a Forward Transconductance g V = 15 V, I = 15 A 75 S fs DS D b Dynamic Input Capacitance C 2400 iss Output Capacitance C V = 20 V, V = 0 V, f = 1 MHz 260 pF oss DS GS Reverse Transfer Capacitance C 100 rss V = 20 V, V = 10 V, I = 20 A 37 56 DS GS D Total Gate Charge Q g 16 24 nC Gate-Source Charge Q V = 20 V, V = 4.5 V, I = 20 A 6.5 gs DS GS D Gate-Drain Charge Q 4.5 gd Gate Resistance R f = 1 MHz 2.5 5.5 8.5 g Turn-On Delay Time t 30 45 d(on) Rise Time t 15 25 V = 20 V, R = 1 r DD L I 20 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 4570 D GEN g d(off) Fall Time t 15 25 f ns Turn-On Delay Time t 915 d(on) Rise Time t 510 V = 20 V, R = 1 r DD L I 20 A, V = 10 V, R = 1 Turn-Off Delay Time t 4060 D GEN g d(off) Fall Time t 510 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 40 S C A a Pulse Diode Forward Current I 100 SM Body Diode Voltage V I = 10 A 0.81 1.2 V SD S Body Diode Reverse Recovery Time t 22 35 ns rr Body Diode Reverse Recovery Charge Q 14 25 nC rr I = 20 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 11 a ns Reverse Recovery Rise Time t 11 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68647 2 S10-0109-Rev. B, 18-Jan-10