X-On Electronics has gained recognition as a prominent supplier of SUM110P06-07L-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SUM110P06-07L-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SUM110P06-07L-E3 Vishay

SUM110P06-07L-E3 electronic component of Vishay
SUM110P06-07L-E3 Vishay
SUM110P06-07L-E3 MOSFETs
SUM110P06-07L-E3  Semiconductors

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See Product Specifications
Part No. SUM110P06-07L-E3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 60 V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)
Datasheet: SUM110P06-07L-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
800: USD 1.925 ea
Line Total: USD 1540 
Availability - 137352
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
20176
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 800
Multiples : 800
800 : USD 2.3187

237
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 19
Multiples : 1
19 : USD 3.3735
22 : USD 3.0043
25 : USD 2.9744
100 : USD 2.652

137352
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 800
Multiples : 800
800 : USD 1.925
1600 : USD 1.9
2400 : USD 1.8875

1896
Ship by Thu. 17 Apr to Tue. 22 Apr
MOQ : 1
Multiples : 1
1 : USD 4.8951
10 : USD 3.1922
30 : USD 2.8261
100 : USD 2.1932
500 : USD 2.0242
800 : USD 1.951

7213
Ship by Tue. 08 Apr to Thu. 10 Apr
MOQ : 1
Multiples : 1
1 : USD 4.1625
10 : USD 3.151
25 : USD 2.937
100 : USD 2.453
500 : USD 2.222
800 : USD 2.09

412
Ship by Tue. 08 Apr to Thu. 10 Apr
MOQ : 1
Multiples : 1
1 : USD 4.48
3 : USD 4.032
7 : USD 2.954
17 : USD 2.8
500 : USD 2.758

237
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 19
Multiples : 1
19 : USD 3.3735
22 : USD 3.0043
25 : USD 2.9744
100 : USD 2.652

96224
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 800
Multiples : 800
800 : USD 2.9492

20176
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 800
Multiples : 800
800 : USD 2.3187

3104
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 800
Multiples : 800
800 : USD 3.4481

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the SUM110P06-07L-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUM110P06-07L-E3 and other electronic components in the MOSFETs category and beyond.

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SUM110P06-07L www.vishay.com Vishay Siliconix P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET d V (V) R ()I (A) DS DS(on) D Package with low thermal resistance 0.0069 at V = -10 V GS -60 -110 Material categorization: 0.0088 at V = -4.5 V GS for definitions of compliance please see www.vishay.com/doc 99912 S TO-263 G SS P-Channel MOSFET DD GG Top View D Ordering Information: SUM110P06-07L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V -60 DS V Gate-Source Voltage V 20 GS d T = 25 C -110 Continuous Drain Current C I D (T = 175 C) J T = 125 C -95 C A Pulsed Drain Current I -240 DM Avalanche Current I -75 AS L = 0.1 mH a Single Pulse Avalanche Energy E 281 mJ AS c T = 25 C 375 C Power Dissipation P W D b T = 25 C 3.75 A Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALUNIT b Junction-to-Ambient PCB mount R 40 thJA C/W Junction-to-Case R 0.4 thJC Notes a. Duty cycle 1 %. b. When mounted on 1 square PCB (FR4 material). c. See SOA curve for voltage derating. d. Limited by package. S15-1278-Rev. D, 08-Jun-15 Document Number: 72439 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUM110P06-07L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -60 - - DS GS D V Gate Threshold Voltage V V = V , I = -250 A -1 - -3 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = -60 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I V = -60 V, V = 0 V, T = 125 C - - -50 A DSS DS GS J V = -60 V, V = 0 V, T = 175 C - - -250 DS GS J a On-State Drain Current I V = -5 V, V = -10 V -120 - - A D(on) DS GS V = -10 V, I = -30 A - 0.0055 0.0069 GS D V = -10 V, I = -30 A, T = 125 C - - 0.0115 GS D J a Drain-Source On-State Resistance R DS(on) V = -10 V, I = -30 A, T = 175 C - - 0.0138 GS D J V = -4.5 V, I = -20 A - 0.0070 0.0088 GS D a Forward Transconductance g V = -15 V, I = -50 A 20 - - S fs DS D b Dynamic Input Capacitance C - 11 400 - iss Output Capacitance C V = 0 V, V = -25 V, f = 1 MHz - 1200 - pF oss GS DS Reverse Transfer Capacitance C - 900 - rss c Total Gate Charge Q - 230 345 g c Gate-Source Charge Q V = -30 V, V = -10 V, I = -110 A -50- nC gs DS GS D c Gate-Drain Charge Q -60- gd Gate Resistance R f = 1 MHz - 3 - g c Turn-On Delay Time t -20 30 d(on) c Rise Time t -25 40 r V = -30 V, R = 0.27 DD L ns c I -110 A, V = -10 V, R = 1 Turn-Off Delay Time t D GEN g - 110 200 d(off) c Fall Time t - 50 100 f b Drain-Source Body Diode Characteristics (T = 25 C ) C Continuous Current I - - -110 S A Pulsed Current I - - -240 SM a Forward Voltage V I = -85 A, V = 0 V - -1 -1.5 V SD F GS Reverse Recovery Time t - 91 137 ns rr Peak Reverse Recovery Charge I I = -85 A, dI/dt = 100 A/s --6 -9 A RM(REC) F Reverse Recovery Charge Q - 0.21 0.44 C rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1278-Rev. D, 08-Jun-15 Document Number: 72439 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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