SUM110P06-07L www.vishay.com Vishay Siliconix P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET d V (V) R ()I (A) DS DS(on) D Package with low thermal resistance 0.0069 at V = -10 V GS -60 -110 Material categorization: 0.0088 at V = -4.5 V GS for definitions of compliance please see www.vishay.com/doc 99912 S TO-263 G SS P-Channel MOSFET DD GG Top View D Ordering Information: SUM110P06-07L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V -60 DS V Gate-Source Voltage V 20 GS d T = 25 C -110 Continuous Drain Current C I D (T = 175 C) J T = 125 C -95 C A Pulsed Drain Current I -240 DM Avalanche Current I -75 AS L = 0.1 mH a Single Pulse Avalanche Energy E 281 mJ AS c T = 25 C 375 C Power Dissipation P W D b T = 25 C 3.75 A Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALUNIT b Junction-to-Ambient PCB mount R 40 thJA C/W Junction-to-Case R 0.4 thJC Notes a. Duty cycle 1 %. b. When mounted on 1 square PCB (FR4 material). c. See SOA curve for voltage derating. d. Limited by package. S15-1278-Rev. D, 08-Jun-15 Document Number: 72439 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUM110P06-07L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -60 - - DS GS D V Gate Threshold Voltage V V = V , I = -250 A -1 - -3 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = -60 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I V = -60 V, V = 0 V, T = 125 C - - -50 A DSS DS GS J V = -60 V, V = 0 V, T = 175 C - - -250 DS GS J a On-State Drain Current I V = -5 V, V = -10 V -120 - - A D(on) DS GS V = -10 V, I = -30 A - 0.0055 0.0069 GS D V = -10 V, I = -30 A, T = 125 C - - 0.0115 GS D J a Drain-Source On-State Resistance R DS(on) V = -10 V, I = -30 A, T = 175 C - - 0.0138 GS D J V = -4.5 V, I = -20 A - 0.0070 0.0088 GS D a Forward Transconductance g V = -15 V, I = -50 A 20 - - S fs DS D b Dynamic Input Capacitance C - 11 400 - iss Output Capacitance C V = 0 V, V = -25 V, f = 1 MHz - 1200 - pF oss GS DS Reverse Transfer Capacitance C - 900 - rss c Total Gate Charge Q - 230 345 g c Gate-Source Charge Q V = -30 V, V = -10 V, I = -110 A -50- nC gs DS GS D c Gate-Drain Charge Q -60- gd Gate Resistance R f = 1 MHz - 3 - g c Turn-On Delay Time t -20 30 d(on) c Rise Time t -25 40 r V = -30 V, R = 0.27 DD L ns c I -110 A, V = -10 V, R = 1 Turn-Off Delay Time t D GEN g - 110 200 d(off) c Fall Time t - 50 100 f b Drain-Source Body Diode Characteristics (T = 25 C ) C Continuous Current I - - -110 S A Pulsed Current I - - -240 SM a Forward Voltage V I = -85 A, V = 0 V - -1 -1.5 V SD F GS Reverse Recovery Time t - 91 137 ns rr Peak Reverse Recovery Charge I I = -85 A, dI/dt = 100 A/s --6 -9 A RM(REC) F Reverse Recovery Charge Q - 0.21 0.44 C rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1278-Rev. D, 08-Jun-15 Document Number: 72439 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000