SUM40010EL www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET d V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Maximum 175 C junction temperature 0.0016 at V = 10 V 120 GS 40 150 Q /Q ratio < 0.5 gd gs 0.0019 at V = 4.5 V 120 GS Operable with logic-level gate drive 100 % R and UIS tested TO-263 g Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS D Power supply - Secondary synchronous rectification SS DC/DC converter DD GG Top View Power tools G Motor drive switch Ordering Information: SUM40010EL-GE3 (lead (Pb)-free and halogen-free) DC/AC inverter Battery management S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 40 DS V Gate-Source Voltage V 20 GS d T = 25 C 120 C Continuous Drain Current (T = 150 C) I J D d T = 70 C 120 C A Pulsed Drain Current (t = 100 s) I 300 DM Avalanche Current I 80 AS L = 0.1 mH a Single Avalanche Energy E 320 mJ AS b T = 25 C 375 C a Maximum Power Dissipation P W D b T = 125 C 125 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMITUNIT c Junction-to-Ambient (PCB Mount) R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR4 material). d. Package limited. S15-2184-Rev. A, 14-Sep-15 Document Number: 66984 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUM40010EL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 40 - - DS GS D V Gate Threshold Voltage V V = V , I = 250 A 1.2 - 2.5 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 250 nA GSS DS GS V = 40 V, V = 0 V - - 1 DS GS A Zero Gate Voltage Drain Current I V = 40 V, V = 0 V, T = 125 C - - 150 DSS DS GS J V = 40 V, V = 0 V, T = 175 C - - 5 mA DS GS J a On-State Drain Current I V 10 V, V = 10 V 120 - - A D(on) DS GS V = 10 V, I = 30 A - 0.00127 0.00160 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 20 A - 0.00152 0.00190 GS D a Forward Transconductance g V = 15 V, I = 30 A - 174 - S fs DS D b Dynamic Input Capacitance C - 11 155 - iss Output Capacitance C V = 0 V, V = 30 V, f = 1 MHz - 7410 - pF oss GS DS Reverse Transfer Capacitance C -880- rss c Total Gate Charge Q - 150 230 g c Gate-Source Charge Q V = 20 V, V = 10 V, I = 20 A -32- nC gs DS GS D c Gate-Drain Charge Q -11- gd Gate Resistance R f = 1 MHz 0.32 1.6 3.2 g c Turn-On Delay Time t -16 32 d(on) c Rise Time t -20 40 V = 20 V, R = 5 r DD L ns c I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t -6D GEN g 5100 d(off) c Fall Time t -17 35 f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C Pulsed Current (t = 100 s) I -- 300 A SM a Forward Voltage V I = 10 A, V = 0 V - 0.8 1.5 V SD F GS Reverse Recovery Time t - 135 203 ns rr Peak Reverse Recovery Charge I I = 41 A, di/dt = 100 A/s -5 10 A RM(REC) F Reverse Recovery Charge Q - 0.340 0.510 C rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2184-Rev. A, 14-Sep-15 Document Number: 66984 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000