3.3 mm3.3 mm SQS401ENW www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) -40 DS d AEC-Q101 qualified R () at V = -10 V 0.029 DS(on) GS 100 % R and UIS tested g R () at V = -4.5 V 0.047 DS(on) GS I (A) -16 Material categorization: D for definitions of compliance please see Configuration Single www.vishay.com/doc 99912 Package PowerPAK 1212-8W S PowerPAK 1212-8W Single D D 8 DD 77 DD 66 G 55 11 22 D SS 33 SS 44 P-Channel MOSFET SS 1 G Top View Bottom View Marking Code: Q023 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -40 DS V Gate-Source Voltage V 20 GS T = 25 C -16 C a Continuous Drain Current I D T = 125 C -16 C a Continuous Source Current (Diode Conduction) I -16 A S b Pulsed Drain Current I -64 DM Single Pulse Avalanche Current I -26 AS L = 0.1 mH Single Pulse Avalanche Energy E 33.8 mJ AS T = 25 C 62.5 C b Maximum Power Dissipation P W D T = 125 C 20 C Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C e, f Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 81 thJA C/W Junction-to-Case (Drain) R 2.4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8W is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S15-1309-Rev. A, 09-Jun-15 Document Number: 67977 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 3.3 mm3 mmSQS401ENW www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = -250 A -40 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = -250 A -1.5 -2.0 -2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = -40 V - - -1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = -40 V, T = 125 C - - -50 A DSS GS DS J V = 0 V V = -40 V, T = 175 C - - -150 GS DS J a On-State Drain Current I V = -10 V V 5 V -20 - - A D(on) GS DS V = -10 V I = -12 A - 0.020 0.029 GS D V = -10 V I = -12 A, T = 125 C - 0.030 0.043 GS D J a Drain-Source On-State Resistance R DS(on) V = -10 V I = -12 A, T = 175 C - 0.040 0.051 GS D J V = -4.5 V I = -9 A - 0.035 0.047 GS D b Forward Transconductance g V = -15 V, I = -7 A - 12 - S fs DS D b Dynamic Input Capacitance C - 1565 1875 iss Output Capacitance C -V = 0 V V = -20 V, f = 1 MHz245295 pF oss GS DS Reverse Transfer Capacitance C -170205 rss c Total Gate Charge Q - 17.7 21.2 g c Gate-Source Charge Q -5V = -4.5 V V = -20 V, I = -9.3 A.66.6 nC gs GS DS D c Gate-Drain Charge Q -8.19.7 gd Gate Resistance R f = 1 MHz 1.1 1.95 2.8 g c Turn-On Delay Time t -11 14 d(on) c Rise Time t -10 13 r V = -20 V, R = 14.2 DD L ns c I -1.4 A, V = -10 V, R = 1 Turn-Off Delay Time t -3D GEN g6.544 d(off) c Fall Time t -10.213 f b Source-Drain Diode Ratings and Characteristic a Pulsed Current I -- -64 A SM Forward Voltage V I = -8.8 A, V = 0 V - -0.8 -1.1 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1309-Rev. A, 09-Jun-15 Document Number: 67977 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000