SQS420EN www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 20 DS Definition R () at V = 4.5 V 0.0280 DS(on) GS TrenchFET Power MOSFET R () at V = 2.5 V 0.0320 DS(on) GS d AEC-Q101 Qualified R () at V = 1.8 V 0.0380 DS(on) GS 100 % R and UIS Tested g I (A) 8 D Compliant to RoHS Directive 2002/95/EC Configuration Single PowerPAK 1212-8 D S 3.30 mm 3.30 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View S Part Marking Code: Q011 N-Channel MOSFET ORDERING INFORMATION Package PowerPAK 1212-8 Lead (Pb)-free and Halogen-free SQS420EN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS T = 25 C 8 C a Continuous Drain Current I D T = 125 C 8 C a Continuous Source Current (Diode Conduction) I 8 A S b Pulsed Drain Current I 32 DM Single Pulse Avalanche Current I 10 AS L = 0.1 mH Single Pulse Avalanche Energy E 5mJ AS T = 25 C 18 C b Maximum Power Dissipation P W D T = 125 C 6 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C e, f 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 81 thJA C/W Junction-to-Case (Drain) R 8.1 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S11-2129 Rev. B, 31-Oct-11 Document Number: 67067 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQS420EN www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 20 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 0.45 0.6 1.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V - - 100 nA GSS DS GS V = 0 V V = 20 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 20 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 20 V, T = 175 C - - 250 GS DS J a On-State Drain Current I V = 4.5 V V 5 V 20 - - A D(on) GS DS V = 4.5 V I = 5 A - 0.0235 0.0280 GS D V = 4.5 V I = 5 A, T = 125 C - - 0.0420 GS D J a Drain-Source On-State Resistance R V = 4.5 V I = 5 A, T = 175 C - - 0.0510 DS(on) GS D J V = 2.5 V I = 4 A - 0.0256 0.0320 GS D V = 1.8 V I = 3 A - 0.0310 0.0380 GS D b Forward Transconductance g V = 10 V, I = 5 A - 36 - S fs DS D b Dynamic Input Capacitance C - 392 490 iss Output Capacitance C -V = 0 V V = 10 V, f = 1 MHz80100 pF oss GS DS Reverse Transfer Capacitance C -4050 rss c Total Gate Charge Q -9 14 g c Gate-Source Charge Q -1V = 4.5 V V = 10 V, I = 5.1 A.1- nC gs GS DS D c Gate-Drain Charge Q -1.3- gd R Gate Resistance f = 1 MHz 6 12 18 g c Turn-On Delay Time t -8 12 d(on) c Rise Time t -8 12 r V = 10 V, R = 10 DD L ns c I 1 A, V = 4.5 V, R = 1 D GEN g Turn-Off Delay Time t -2132 d(off) c Fall Time t -812 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 32 A SM Forward Voltage V I = 5 A, V = 0 V - 0.73 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2129 Rev. B, 31-Oct-11 Document Number: 67067 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000