3.3 mm3.3 mm
SQS481ENW
www.vishay.com
Vishay Siliconix
Automotive P-Channel 150 V (D-S) 175 C MOSFET
FEATURES
PowerPAK 1212-8W Single
TrenchFET power MOSFET
D
D
8
d
DD
AEC-Q101 qualified
77
DD
66
55 100 % R and UIS tested
g
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
11
22
SS
33 S
SS
44
SS
1
G
Top View Bottom View
Marking Code: Q026
G
PRODUCT SUMMARY
V (V) -150
DS
R ( ) at V = -10 V 1.095
DS(on) GS
D
I (A) -4.7
D
P-Channel MOSFET
Configuration Single
Package PowerPAK 1212-8W
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOLLIMITUNIT
Drain-source voltage V -150
DS
V
Gate-source voltage V 20
GS
T = 25 C -4.7
C
a
Continuous drain current I
D
T = 125 C -2.75
C
a
Continuous source current (diode conduction) I -8 A
S
b
Pulsed drain current I -19
DM
Single pulse avalanche current I -4
AS
L = 0.1 mH
Single pulse avalanche energy E 0.8 mJ
AS
T = 25 C 62.5
C
b
Maximum power dissipation P W
D
T = 125 C 20
C
Operating junction and storage temperature range T , T -55 to +175
J stg
C
e, f
Soldering recommendations (peak temperature) 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOLLIMITUNIT
c
Junction-to-ambient PCB mount R 81
thJA
C/W
Junction-to-case (drain) R 2.4
thJC
Notes
a. Package limited
b. Pulse test; pulse width 300 s, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. Parametric verification ongoing
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8W is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S18-0931-Rev. C, 17-Sep-2018 Document Number: 76468
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3.3 mm3 mm
SQS481ENW
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT
Static
Drain-source breakdown voltage V V = 0, I = -250 A -150 - -
DS GS D
V
Gate-source threshold voltage V V = V , I = -250 A -2.5 -3 -3.5
GS(th) DS GS D
Gate-source leakage I V = 0 V, V = 20 V - - 100 nA
GSS DS GS
V = 0 V V = -150 V - - -1
GS DS
Zero gate voltage drain current I V = 0 V V = -150 V, T = 125 C - - -50 A
DSS GS DS J
V = 0 V V = -150 V, T = 175 C - - -150
GS DS J
a
On-state drain current I V = -10 V V 5 V -5 - - A
D(on) GS DS
V = -10 V I = -2.4 A - 0.910 1.095
GS D
a
Drain-source on-state resistance R V = -10 V I = -2.4 A, T = 125 C - - 2.290
DS(on) GS D J
V = -10 V I = -2.4 A, T = 175 C - - 2.570
GS D J
b
Forward transconductance g V = -15 V, I = -1 A - 2.5 - S
fs DS D
b
Dynamic
Input capacitance C V = 0 V V = -75 V, f = 1 MHz - 305 385
iss GS DS
Output capacitance C V = 0 V V = -75 V, f = 1 MHz - 18 24 pF
oss GS DS
Reverse transfer capacitance C V = 0 V V = -75 V, f = 1 MHz - 10 13
rss GS DS
c
Total gate charge Q V = -10 V V = -75 V, I = -1 A - 8 11
g GS DS D
c
Gate-source charge Q V = -10 V V = -75 V, I = -1 A - 1.7 - nC
gs GS DS D
c
Gate-drain charge Q V = -10 V V = -75 V, I = -1 A - 2.5 -
gd GS DS D
Gate resistance R f = 1 MHz 2.8 4.7 7.6
g
c
Turn-on delay time t -7.1 10
d(on)
c
Rise time t -2.3 3.3
r V = -75 V, R = 75
DD L
ns
c
I -1 A, V = -10 V, R = 1
D GEN g
Turn-off delay time t -15.321.5
d(off)
c
Fall time t -2.63.8
f
b
Source-Drain Diode Ratings and Characteristic
a
Pulsed current I -- -20 A
SM
Forward voltage V I = -5 A, V = 0 V - -0.8 -1.1 V
SD F GS
Notes
a. Pulse test; pulse width 300 s, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0931-Rev. C, 17-Sep-2018 Document Number: 76468
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000