CXDM6053N
SURFACE MOUNT
www.centralsemi.com
N-CHANNEL
DESCRIPTION:
ENHANCEMENT-MODE
The CENTRAL SEMICONDUCTOR CXDM6053N is
SILICON MOSFET
a high current N-channel enhancement-mode silicon
MOSFET, designed for high speed pulsed amplifier
and driver applications. This MOSFET offers high
current, low r , low threshold voltage, and low
DS(ON)
leakage current.
MARKING: FULL PART NUMBER
SOT-89 CASE
FEATURES:
APPLICATIONS:
Low r (52m MAX @ V =4.5V)
Load/Power switches
DS(ON) GS
Power supply converter circuits High current (I =5.3A)
D
Battery powered portable equipment
Logic level compatibility
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
A
Drain-Source Voltage V 60 V
DS
Gate-Source Voltage V 20 V
GS
Continuous Drain Current (Steady State) I 5.3 A
D
Maximum Pulsed Drain Current, tp=10s I 30 A
DM
Power Dissipation P 1.2 W
D
Operating and Storage Junction Temperature T , T -55 to +150 C
J stg
Thermal Resistance 104 C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I , I V =20V, V=0 100 nA
GSSF GSSR GS DS
I V =60V, V=0 1.0 A
DSS DS GS
BV V =0, I=250A 60 V
DSS GS D
V V =V , I=250A 1.0 1.3 3.0 V
GS(th) GS DS D
V V =0, I=2.0A 1.2 V
SD GS S
r V =10V, I=5.3A 30 41 m
DS(ON) GS D
r V =4.5V, I=4.7A 33 52 m
DS(ON) GS D
Q V =30V, V =5.0V, I=5.3A 8.8 nC
g(tot) DS GS D
Q V =30V, V =5.0V, I=5.3A 1.9 nC
gs DS GS D
Q V =30V, V =5.0V, I=5.3A 3.6 nC
gd DS GS D
C V =30V, V =0, f=1.0MHz 53 pF
rss DS GS
C V =30V, V =0, f=1.0MHz 920 pF
iss DS GS
C V =30V, V =0, f=1.0MHz 49 pF
oss DS GS
t V =30V, V =4.5V, I=4.4A
on DD GS D
R =1.0, R=6.8 33 ns
G L
t V =30V, V =4.5V, I=4.4A
off DD GS D
R =1.0, R=6.8 42 ns
G L
R1 (9-August 2012)CXDM6053N
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-89 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Gate
2) Drain
3) Source
MARKING: FULL PART NUMBER
R1 (9-August 2012)
www.centralsemi.com