X-On Electronics has gained recognition as a prominent supplier of SQS840CENW-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQS840CENW-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQS840CENW-T1_GE3 Vishay

SQS840CENW-T1_GE3 electronic component of Vishay
SQS840CENW-T1_GE3 Vishay
SQS840CENW-T1_GE3 MOSFETs
SQS840CENW-T1_GE3  Semiconductors

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See Product Specifications
Part No. SQS840CENW-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 40-VD-S175C MOSFET N-CHANNEL PowerPAK
Datasheet: SQS840CENW-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.905 ea
Line Total: USD 0.9 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.555
6000 : USD 0.5533
9000 : USD 0.5516
12000 : USD 0.55
15000 : USD 0.5482
24000 : USD 0.5465
30000 : USD 0.5446
75000 : USD 0.5429
150000 : USD 0.5409

0
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 1
Multiples : 1
1 : USD 1.1397
10 : USD 0.7305
100 : USD 0.5274
500 : USD 0.3694
1000 : USD 0.2866

0
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 0.905
10 : USD 0.6662
100 : USD 0.4101
500 : USD 0.3522
1000 : USD 0.3079
3000 : USD 0.2715
6000 : USD 0.2704

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQS840CENW-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQS840CENW-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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3.3 mm3.3 mm SQS840CENW www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PowerPAK 1212-8W Single TrenchFET power MOSFET D D 8 DD AEC-Q101 qualified 77 DD 66 55 100 % R and UIS tested g Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 11 22 SS 33 SS D 44 SS 1 G Top View Bottom View Marking code: Q041 G PRODUCT SUMMARY V (V) 40 DS R ( ) at V = 10 V 0.020 DS(on) GS R ( ) at V = 4.5 V 0.022 DS(on) GS S I (A) 12 D N-Channel MOSFET Configuration Single Package PowerPAK 1212-8W ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 40 DS V Gate-source voltage V 20 GS T = 25 C 12 C a Continuous drain current I D T = 125 C 12 C a Continuous source current (diode conduction) I 12 A S b Pulsed drain current I 24 DM Single pulse avalanche current I 19 AS L = 0.1 mH Single pulse avalanche energy E 18 mJ AS T = 25 C 33 C b Maximum power dissipation P W D T = 125 C 11 C Operating junction and storage temperature range T , T -55 to +175 J stg C e, f Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-ambient PCB mount R 81 thJA C/W Junction-to-case (drain) R 4.5 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) d. Parametric verification ongoing e. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8W is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S19-0275-Rev. A, 25-Mar-2019 Document Number: 77821 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 3.3 mm3 mmSQS840CENW www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 40 - - DS GS D V Gate-source threshold voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 40 V - - 1 GS DS Zero gate voltage drain current I V = 0 V V = 40 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 40 V, T = 175 C - - 150 GS DS J a On-state drain current I V = 10 V V 5 V 20 - - A D(on) GS DS V = 10 V I = 7.5 A - 0.014 0.020 GS D V = 10 V I = 7.5 A, T = 125 C - - 0.034 GS D J a Drain-source on-state resistance R DS(on) V = 10 V I = 7.5 A, T = 175 C - - 0.042 GS D J V = 4.5 V I = 6.5 A - 0.015 0.022 GS D b Forward transconductance g V = 15 V, I = 10 A - 62 - S fs DS D b Dynamic Input capacitance C - 825 1031 iss Output capacitance C V = 0 V V = 20 V, f = 1 MHz - 131 164 pF oss GS DS Reverse transfer capacitance C -58 73 rss c Total gate charge Q - 15 22.5 g c Gate-source charge Q V = 10 V V = 20 V, I = 4 A -2.8 - nC gs GS DS D c Gate-drain charge Q -2.9 - gd Gate resistance R f = 1 MHz 1.6 3.3 5 g c Turn-on delay time t -6.5 9.8 d(on) c Rise time t -2.7 4 r V = 20 V, R = 5 DD L ns c I 4 A, V = 10 V, R = 1 Turn-off delay time t D GEN g -26 40 d(off) c Fall time t -4.3 6.5 f b Source-Drain Diode Ratings and Characteristic a Pulsed current I -- 48 A SM Forward voltage V I = 4.8 A, V = 0 V - 0.82 1.2 V SD F GS Body diode reverse recovery time t -18 36 ns rr Body diode reverse recovery charge Q -12 24 nC rr I = 5 A, di/dt = 100 A/s F Reverse recovery fall time t -11 - a ns Reverse recovery rise time t -6 - b Body diode peak reverse recovery current I --1.3 -3 A RM(REC) Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0275-Rev. A, 25-Mar-2019 Document Number: 77821 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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