3.3 mm3.3 mm SQS966ENW www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PowerPAK 1212-8W Dual D TrenchFET power MOSFET 1 D 1 8 DD 22 77 AEC-Q101 qualified DD 22 66 55 100 % R and UIS tested g Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 11 22 SS 33 11 GG 44 11 SS 22 1 D D G 1 2 2 Top View Bottom View Marking code: Q027 PRODUCT SUMMARY G G 1 2 V (V) 60 DS R ( ) at V = 10 V 0.036 DS(on) GS R ( ) at V = 4.5 V 0.048 DS(on) GS S S I (A) 6 D 1 2 Configuration Dual N-Channel MOSFET N-Channel MOSFET Package PowerPAK 1212-8W ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 60 DS V Gate-source voltage V 20 GS T = 25 C 6 C a Continuous drain current I D T = 125 C 6 C a Continuous source current (diode conduction) I 6 A S b Pulsed drain current I 24 DM Single pulse avalanche current I 12 AS L = 0.1 mH Single pulse avalanche energy E 7.2 mJ AS T = 25 C 27.8 C b Maximum power dissipation P W D T = 125 C 9.25 C Operating junction and storage temperature range T , T -55 to +175 J stg C e, f Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-ambient PCB mount R 94 thJA C/W Junction-to-case (drain) R 5.4 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) d. Parametric verification ongoing e. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8W is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S19-0478-Rev. B, 27-May-2019 Document Number: 75966 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 3.3 mm3 mm SQS966ENW www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 60 - - DS GS D V Gate-source threshold voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 60 V - - 1 GS DS Zero gate voltage drain current I V = 0 V V = 60 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 60 V, T = 175 C - - 150 GS DS J a On-state drain current I V = 10 V V 5 V 13 - - A D(on) GS DS V = 10 V I = 1.25 A - 0.028 0.036 GS D V = 10 V I = 1.25 A, T = 125 C - - 0.055 GS D J a Drain-source on-state resistance R DS(on) V = 10 V I = 1.25 A, T = 175 C - - 0.066 GS D J V = 4.5 V I = 1.25 A - 0.036 0.048 GS D b Forward transconductance g V = 15 V, I = 6 A - 2.8 - S fs DS D b Dynamic Input capacitance C - 440 572 iss Output capacitance C V = 0 V V = 25 V, f = 1 MHz - 190 247 pF oss GS DS Reverse transfer capacitance C -15 20 rss c Total gate charge Q -6.2 8.8 g c Gate-source charge Q V = 10 V V = 30 V, I = 1.25 A -1.4 - nC gs GS DS D c Gate-drain charge Q -0.8 - gd Gate resistance R f = 1 MHz 0.5 0.9 1.5 g c Turn-on delay time t - 7.9 11.9 d(on) c Rise time t -1.7 2.6 r V = 30 V, R = 24 DD L ns I 1.25 A, V = 10 V, R = 1 c D GEN g Turn-off delay time t - 14 19.5 d(off) c Fall time t -4.8 7.2 f b Source-Drain Diode Ratings and Characteristic a Pulsed current I -- 24 A SM Forward voltage V I = 6 A, V = 0 V - 0.82 1.1 V SD F GS Body diode reverse recovery time t - 22.7 44 ns rr Body diode reverse recovery charge Q -20 26 nC rr I = 1 A, di/dt = 100 A/s F Reverse recovery fall time t -12 - a ns Reverse recovery rise time t -11 - b Body diode peak reverse recovery current I - -1.3 -1.95 A RM(REC) Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0478-Rev. B, 27-May-2019 Document Number: 75966 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000