SQV120N10-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) 100 DS Package with Low Thermal Resistance R ( ) at V = 10 V 0.0038 DS(on) GS d AEC-Q101 Qualified I (A) 120 D 100 % R and UIS Tested g Configuration Single Material categorization: TO-262 D For definitions of compliance please see www.vishay.com/doc 99912 12 3 G Top View S N-Channel MOSFET G D S ORDERING INFORMATION Package TO-262 Lead (Pb)-free and Halogen-free SQV120N10-3m8-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS a T = 25 C 120 C Continuous Drain Current I D T = 125 C 102 C a Continuous Source Current (Diode Conduction) I 120 A S b Pulsed Drain Current I 480 DM Single Pulse Avalanche Current I 73 AS L = 0.1 mH Single Pulse Avalanche Energy E 266 mJ AS T = 25 C 250 C b Maximum Power Dissipation P W D T = 125 C 83 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 0.6 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. Parametric verification ongoing. S13-1433-Rev. A, 01-Jul-13 Document Number: 63402 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQV120N10-3m8 www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 100 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 2.5 3.0 3.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 100 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 100 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 100 V, T = 175 C - - 500 GS DS J a On-State Drain Current I V = 10 V V 5 V 120 - - A D(on) GS DS V = 10 V I = 20 A - 0.0030 0.0038 GS D a Drain-Source On-State Resistance R V = 10 V I = 20 A, T = 125 C - - 0.0064 DS(on) GS D J V = 10 V I = 20 A, T = 175 C - - 0.0080 GS D J b Forward Transconductance g V = 15 V, I = 20 A - 82 - S fs DS D b Dynamic Input Capacitance C - 5780 7230 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz30703840 pF oss GS DS Reverse Transfer Capacitance C -305385 rss c Total Gate Charge Q - 125 190 g c Gate-Source Charge Q -2V = 10 V V = 50 V, I = 70 A8- nC gs GS DS D c Gate-Drain Charge Q -46- gd Gate Resistance R f = 1 MHz 1.6 3.3 5 g c Turn-On Delay Time t -16 25 d(on) c Rise Time t - 110 165 r V = 50 V, R = 0.7 DD L ns c I 70 A, V = 10 V, R = 1 D GEN g Turn-Off Delay Time t -4060 d(off) c Fall Time t -1220 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - 480 A SM Forward Voltage V I = 100 A, V = 0 - 0.9 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-1433-Rev. A, 01-Jul-13 Document Number: 63402 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000