IRFP048R, SiHFP048R www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) 60 DS Isolated central mounting hole R ( )V = 10 V 0.018 DS(on) GS 175 C operating temperature Q max. (nC) 110 g Q (nC) 29 Ease of paralleling gs Q (nC) 38 gd Simple drive requirements Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D DESCRIPTION TO-247AC Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for S S commercial-industrial applications where higher power D G levels preclude the use of TO-220AB devices. The N-Channel MOSFET TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package TO-247AC Lead (Pb)-free IRFP048RPbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS e Continuous Drain Current T = 25 C 70 C V at 10 V I GS D Continuous Drain Current T = 100 C 52 A C a Pulsed Drain Current I 290 DM Linear Derating Factor 1.3 W/C b Single Pulse Avalanche Energy E 200 mJ AS Maximum Power Dissipation T = 25 C P 190 W C D c Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 43 H, R = 25 , I = 73 A (see fig. 12). DD J g AS c. I 72 A, dI/dt 200 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. Current limited by the package (die current = 73 A) S16-0015-Rev. C, 18-Jan-16 Document Number: 91199 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFP048R, SiHFP048R www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.80 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.060 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 44 A - - 0.018 DS(on) GS D b Forward Transconductance g V = 25 V, I = 44 A 20 - - S fs DS D Dynamic Input Capacitance C - 2400 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 1300- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -190- rss Total Gate Charge Q - - 110 g I = 72 A, V = 48 V D DS Gate-Source Charge Q --V = 10 V 29 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --38 gd Turn-On Delay Time t -8.1 - d(on) Rise Time t -250 - r V = 30 V, I = 72 A, DD D ns b R = 9.1 , R = 0.34 , see fig. 10 Turn-Off Delay Time t -2g D 10- d(off) Fall Time t -250- f D Between lead, Internal Drain Inductance L -5.0 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -13 - S S Drain-Source Body Diode Characteristics MOSFET symbol D c Continuous Source-Drain Diode Current I -- 70 S showing the A G integral reverse a Pulsed Diode Forward Current I - - 290 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 73 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 120 180 ns rr b T = 25 C, I = 72 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.50 0.80 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. Current limited by the package (die current = 73 A). S16-0015-Rev. C, 18-Jan-16 Document Number: 91199 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000