IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for V (V) 500 DS External Diodes in ZVS Applications Available R ( )V = 10 V 0.190 DS(on) GS Lower Gate Charge Results in Simpler Drive RoHS* Q (Max.) (nC) 150 g COMPLIANT Requirements Q (nC) 44 gs Enhanced dV/dt Capabilities Offer Improved Ruggedness Q (nC) 72 gd Higher Gate Voltage Threshold Offers Improved Noise Configuration Single Immunity D Compliant to RoHS Directive 2002/95/EC TO-247AC APPLICATIONS Zero Voltage Switching SMPS G Telecom and Server Power Supplies Uninterruptible Power Supplies S Motor Control Applications D S G N-Channel MOSFET ORDERING INFORMATION Package TO-247AC IRFP23N50LPbF Lead (Pb)-free SiHFP23N50L-E3 IRFP23N50L SnPb SiHFP23N50L ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 23 C Continuous Drain Current V at 10 V I GS D T = 100 C 15 A C a Pulsed Drain Current I 92 DM Linear Derating Factor 2.9 W/C b Single Pulse Avalanche Energy E 410 mJ AS a Repetitive Avalanche Current I 23 A AR a Repetitive Avalanche Energy E 37 mJ AR Maximum Power Dissipation T = 25 C P 370 W C D c Peak Diode Recovery dV/dt dV/dt 21 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 1.5 mH, R = 25 , I = 23 A (see fig. 12). J g AS c. I 23 A, dI/dt 650 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91209 www.vishay.com S11-0445-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFP23N50L, SiHFP23N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.34 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D d V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.27 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 50 A DS GS Zero Gate Voltage Drain Current I DSS V = 400 V, V = 0 V, T = 125 C - - 2.0 mA DS GS J b Drain-Source On-State Resistance R V = 10 V I = 14 A - 0.190 0.235 DS(on) GS D b Forward Transconductance g V = 50 V, I = 14 A 12 - - S fs DS D Dynamic Input Capacitance C V = 0 V, - 3600 - iss GS Output Capacitance C -V = 25 V, 380- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -37- rss V = 1.0 V , f = 1.0 MHz - 4800 - DS pF Output Capacitance C oss V = 400 V , f = 1.0 MHz - 100 - DS V = 0 V c GS Effective Output Capacitance C eff. V = 0 V to 400 V - 220 - oss DS Effective Output Capacitance d C eff. (ER) V = 0 V to 400 V - 160 - oss DS (Energy Related) Internal Gate Resistance R f = 1 MHz, open drain - 1.2 - G Total Gate Charge Q - - 150 g I = 23 A, V = 400 V D DS Gate-Source Charge Q --V = 10 V 44 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --72 gd Turn-On Delay Time t -26 - d(on) V = 250 V, I = 23 A DD D Rise Time t -94 - r R = 6.0, V = 10 V ns g GS Turn-Off Delay Time t -53- d(off) b see fig. 10 Fall Time t -45- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 23 S showing the A G integral reverse a Pulsed Diode Forward Current I S -- 92 SM p - n junction diode b Body Diode Voltage V T = 25 C, I = 14 A, V = 0 V -- 1.5 V SD J S GS T = 25 C - 170 250 J Body Diode Reverse Recovery Time t ns rr T = 125 C - 220 330 J I = 23 A, F b dI/dt = 100 A/s T = 25 C - 560 840 J Body Diode Reverse Recovery Charge Q C rr T =1 25 C - 980 1500 J Reverse Recovery Current I T = 25 C - 7.6 11 A RRM J Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising fom 0 % to 80 % V . oss oss DS DS d. C eff. (ER) is a fixed capacitance that stores the same energy time as C while V is rising fom 0 % to 80 % V . oss oss DS DS www.vishay.com Document Number: 91209 2 S11-0445-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000