IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount V (V) -60 DS Available in tape and reel R ( )V = -10 V 0.50 DS(on) GS Dynamic dV/dt rating Q (Max.) (nC) 12 g Repetitive avalanche rated Q (nC) 3.8 gs Available P-channel Q (nC) 5.1 gd Fast switching Configuration Single Ease of paralleling S Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 SOT-223 DESCRIPTION G D Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, S ruggedized device design, low on-resistance and D G cost-effectiveness. The SOT-223 package is designed for surface-mounting D using vapor phase, infrared, or wave soldering techniques. Marking code: FE P-Channel MOSFET Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. ORDERING INFORMATION Package SOT-223 SOT-223 Lead (Pb)-free and Halogen-free SiHFL9014-GE3 SiHFL9014TR-GE3 a IRFL9014PbF IRFL9014TRPbF Lead (Pb)-free a SiHFL9014-E3 SiHFL9014T-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -60 DS V Gate-Source Voltage V 20 GS T = 25 C -1.8 C Continuous Drain Current V at - 10 V I GS D T = 100 C -1.1 A C a Pulsed Drain Current I -14 DM Linear Derating Factor 0.025 W/C e Linear Derating Factor (PCB Mount) 0.017 b Single Pulse Avalanche Energy E 140 mJ AS a Repetitive Avalanche Current I -1.8 A AR a Repetitive Avalanche Energy E 0.31 mJ AR Maximum Power Dissipation T = 25 C 3.1 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.0 A c Peak Diode Recovery dV/dt dV/dt -4.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 50 mH, R = 25 , I = - 1.8 A (see fig. 12). DD J g AS c. I - 6.7 A, dI/dt 90 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S14-1686-Rev. F, 18-Aug-14 Document Number: 91195 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -60 thJA a (PCB Mount) C/W Maximum Junction-to-Case (Drain) R -40 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A -60 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - -0.059 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = -60 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = -48 V, V = 0 V, T = 125 C - - -500 DS GS J b Drain-Source On-State Resistance R V = -10 V I = 1.1 A - - 0.50 DS(on) GS D b Forward Transconductance g V = - 25 V, I = 1.1 A 1.3 - - S fs DS D Dynamic Input Capacitance C - 270 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 170- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -31- rss Total Gate Charge Q -- 12 g I = - 6.7 A, V = - 48 V, D DS Gate-Source Charge Q --V = - 10 V 3.8 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --5.1 gd Turn-On Delay Time t -11 - d(on) Rise Time t -63 - r V = - 30 V, I = - 6.7 A, DD D ns b R = 24 , R = 4.0 , see fig. 10 g D Turn-Off Delay Time t -9.6- d(off) Fall Time t -31- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -6.0 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- - 1.8 S showing the A integral reverse G a Pulsed Diode Forward Current I -- - 14 p - n junction diode SM S b Body Diode Voltage V T = 25 C, I = - 1.8 A, V = 0 V -- - 5.5 V SD J S GS Body Diode Reverse Recovery Time t - 80 160 ns rr b T = 25 C, I = - 6.7 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.096 0.19 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S14-1686-Rev. F, 18-Aug-14 Document Number: 91195 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000