IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S Surface-mount Available in tape and reel Dynamic dv/dt rating SOT-223 G Repetitive avalanche rated D P-channel Available Fast switching S D Ease of paralleling G Material categorization: for definitions of compliance D please see www.vishay.com/doc 99912 P-Channel MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the Marking code: FF designer with the best combination of fast switching, ruggedized device design, low on-resistance and PRODUCT SUMMARY cost-effectiveness. The SOT-223 package is designed for surface-mount usin g V (V) -100 DS vapor phase, infrared, or wave soldering techniques. Its R ( )V = -10 V 1.2 DS(on) GS unique package design allows for easy automatic Q max. (nC) 8.7 pick-and-place as with other SOT or SOIC packages bu t g has the added advantage of improved thermal performance Q (nC) 2.2 gs due to an enlarged tab for heatsinking. Power dissipation of Q (nC) 4.1 gd greater than 1.25 W is possible in a typical surface moun t application. Configuration Single ORDERING INFORMATION Package SOT-223 a SiHFL9110TR-GE3 Lead (Pb)-free and halogen-free a, b IRFL9110TRPbF-BE3 a Lead (Pb)-free IRFL9110TRPbF Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -100 DS V Gate-source voltage V 20 GS T = 25 C -1.1 C Continuous drain current V at -10 V I GS D T = 100 C -0.69 A C a Pulsed drain current I -8.8 DM Linear derating factor 0.025 W/C e Linear derating factor (PCB mount) 0.017 b Single pulse avalanche energy E 100 mJ AS a Avalanche current I -1.1 A AR a Repetitive avalanche energy E 0.31 mJ AR Maximum power dissipation T = 25 C 3.1 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.0 A c Peak diode recovery dv/dt dv/dt -5.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = -25 V, starting T = 25 C, L = 7.7 mH, R = 25 , I = -4.4 A (see fig. 12) DD J g AS c. I -4.4 A, di/dt -75 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0322-Rev. G, 05-Apr-2021 Document Number: 91196 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R -- 60 thJA a (PCB mount) C/W Maximum junction-to-case (drain) R -- 40 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = -1 mA - -0.091 - V/C DS DS J D Gate-source threshold voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = -100 V, V = 0 V - - -100 DS GS Zero gate voltage drain current I A DSS V = -80 V, V = 0 V, T = 125 C - - - 500 DS GS J b Drain-source on-state resistance R V = -10 V I = -0.66 A -- 1.2 DS(on) GS D Forward transconductance g V = -50 V, I = -0.66 A 0.82 - - S fs DS D Dynamic Input capacitance C - 200 - iss V = 0 V, GS Output capacitance C -9V = - 25 V, 4- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -18- rss Total gate charge Q -- 8.7 g I = -4.0 A, V = -80 V, D DS Gate-source charge Q --V = -10 V 2.2 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --4.1 gd Turn-on delay time t -10 - d(on) Rise time t -27 - r V = -50 V, I = -4.0 A, DD D ns b R = 24 , R = 11 , see fig. 10 g D Turn-off delay time t -15- d(off) Fall time t -17- f D Between lead, Internal drain inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L die contact -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- -1.1 S showing the A integral reverse G a Pulsed diode forward current I p - n junction diode -- -8.8 SM S b Body diode voltage V T = 25 C, I = -1.1 A, V = 0 V -- -5.5 V SD J S GS Body diode reverse recovery time t - 80 160 ns rr b T = 25 C, I = -4.0 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.15 0.30 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0322-Rev. G, 05-Apr-2021 Document Number: 91196 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000