IRFP140, SiHFP140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 100 DS Available Repetitive Avalanche Rated R ()V = 10 V 0.077 DS(on) GS RoHS* Isolated Central Mounting Hole Q (Max.) (nC) 72 COMPLIANT g 175 C Operating Temperature Q (nC) 11 gs Fast Switching Q (nC) 32 gd Ease of Paralleling Configuration Single Simple Drive Requirements D Compliant to RoHS Directive 2002/95/EC TO-247AC DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S D The TO-247AC package is preferred for S G commercial-industrial applications where higher power N-Channel MOSFET levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package TO-247AC IRFP140PbF Lead (Pb)-free SiHFP140-E3 IRFP140 SnPb SiHFP140 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 31 C Continuous Drain Current V at 10 V I GS D A T = 100 C 22 C a Pulsed Drain Current I 120 DM Linear Derating Factor 1.2 W/C b Single Pulse Avalanche Energy E 100 mJ AS a Repetitive Avalanche Current I 31 A AR a E 18 mJ Repetitive Avalanche Energy AR Maximum Power Dissipation T = 25 C P 180 W C D c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 156 H, R = 25 , I = 31 A (see fig. 12). DD J g AS c. I 28 A, dI/dt 170 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91202 www.vishay.com S11-0446-Rev. B, 14-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFP140, SiHFP140 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.83 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.13 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - GS(th) DS GS D 4.0 V Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 150 C - - DS GS J 250 b Drain-Source On-State Resistance R V = 10 V I = 19 A -- DS(on) GS D 0.077 b Forward Transconductance g V = 50 V, I = 19 A 9.8 - - fs DS D S Dynamic V = 0 V, Input Capacitance C - 1700 - GS iss Output Capacitance C -V = 25 V, 550- pF oss DS Reverse Transfer Capacitance C -110- f = 1.0 MHz, see fig. 5 rss Total Gate Charge Q -- 72 g I = 17 A, V = 80 V D DS Gate-Source Charge Q --V = 10 V 11 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --32 gd Turn-On Delay Time t -11 - d(on) Rise Time t -44 - r V = 50 V, I = 17 A, DD D ns Turn-Off Delay Time t -53- d(off) b R = 9.1 , R = 2.9 , see fig. 10 g D Fall Time t -43- f D Between lead, Internal Drain Inductance L -5.0 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -13 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 31 S showing the A G integral reverse a Pulsed Diode Forward Current I - - 120 SM S p - n junction diode b Body Diode Voltage V -- SD T = 25 C, I = 31 A, V = 0 V 2.5 V J S GS Body Diode Reverse Recovery Time t - rr 180 360 ns b T = 25 C, I = 17 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - rr 1.3 2.8 C Forward Turn-On Time t on Intrinsic turn-on time is neglegible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91202 2 S11-0446-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000