IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 250 DS Available Repetitive Avalanche Rated R ( )V = 10 V 0.28 DS(on) GS RoHS* Isolated Central Mounting Hole COMPLIANT Q (Max.) (nC) 63 g Fast Switching Q (nC) 12 gs Simple Drive Requirements Q (nC) 39 gd Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D Third generation Power MOSFETs from Vishay provide the TO-247AC designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The S D TO-247AC is similar but superior to the earlier TO-218 S G package because of its isolated mounting hole. It also N-Channel MOSFET provides greater creepage distance between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package TO-247AC IRFP244PbF Lead (Pb)-free SiHFP244-E3 IRFP244 SnPb SiHFP244 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 250 DS V Gate-Source Voltage V 20 GS T = 25 C 15 C Continuous Drain Current V at 10 V I GS D A T = 100 C 9.7 C a Pulsed Drain Current I 60 DM Linear Derating Factor 1.2 W/C b Single Pulse Avalanche Energy E 550 mJ AS a Repetitive Avalanche Current I 15 A AR a Repetitive Avalanche Energy E 15 mJ AR Maximum Power Dissipation T = 25 C P 150 W C D c Peak Diode Recovery dV/dt dV/dt 4.8 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 3.9 mH, R = 25 , I = 15 A (see fig. 12). DD J g AS c. I 15 A, dI/dt 150 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91211 www.vishay.com S11-0445-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFP244, SiHFP244 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.83 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 250 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.37 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 GS(th) DS GS D V Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 250 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 200 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 9.0 A -- 0.28 DS(on) GS D b Forward Transconductance g V = 50 V, I = 9.0 A 6.7 - - fs DS D S Dynamic Input Capacitance C - 1400 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 320- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -73- rss Total Gate Charge Q -- 63 g I = 11 A, V = 200 V, D DS Gate-Source Charge Q --V = 10 V 12 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --39 gd Turn-On Delay Time t -14 - d(on) Rise Time t -49 - r V = 125 V, I = 11 A , DD D ns b R = 9.1 , R = 11 , see fig. 10 Turn-Off Delay Time t -42- d(off) g D Fall Time t -24- f D Between lead, Internal Drain Inductance L -5.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -13 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 15 S showing the A integral reverse G a p - n junction diode Pulsed Diode Forward Current I -- 60 SM S b Body Diode Voltage V T = 25 C, I = 15 A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 290 570 ns rr b T = 25 C, I = 11 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -3.1 6.3 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91211 2 S11-0445-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000