PD-90554F IRFM250 JANTX2N7225 JANTXV2N7225 POWER MOSFET REF:MIL-PRF-19500/592 THRU-HOLE (TO-254AA) 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM250 0.100 27.4A HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as Features: switching power supplies, motor controls, inverters, Simple Drive Requirements choppers, audio amplifiers, high energy pulse circuits, and Ease of Paralleling virtually any application where high reliability is required. Hermetically Sealed The HEXFET transistors totally isolated package eliminates Electrically Isolated the need for additional isolating material between the device Dynamic dv/dt Rating and the heatsink. This improves thermal efficiency and Light-weight reduces drain capacitance. Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 27.4 D GS C A I V = 10V, T = 100C Continuous Drain Current 17 D GS C I Pulsed Drain Current 110 DM P T = 25C Max. Power Dissipation 150 W D C Linear Derating Factor 1.2 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 500 mJ AS I Avalanche Current 27.4 A AR E Repetitive Avalanche Energy 15 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction -55 to 150 J C T Storage Temperature Range STG Lead Temperature 300 (0.063 in.(1.6mm) from case for 10s) Weight 9.3 (Typical) g For footnotes refer to the last page www.irf.com 1 IRFM250 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 1.0mA DSS GS D BV /T Temperature Coefficient of Breakdown 0.28 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.100 V = 10V, I = 17A DS(on) GS D Resistance 0.105 V = 10V, I = 27.4A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 9.0 S V = 15V, I = 17A fs DS DS I Zero Gate Voltage Drain Current 25 V = 160V ,V = 0V DSS DS GS A 250 V = 160V, DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V = -20V GSS GS Q Total Gate Charge 115 V =10V, I = 27.4A g GS D Q Gate-to-Source Charge 22 nC V = 100V gs DS Q Gate-to-Drain (Miller) Charge 60 gd t Turn-On Delay Time 35 V = 100V, I = 27.4A, d(on) DD D t Rise Time 190 V =10V, R = 2.35 r GS G ns t Turn-Off Delay Time 170 d(off) t Fall Time 130 f Measured from drain lead (6mm/0.25in. from L + L Total Inductance 6.8 S D nH package) to source lead (6mm/0.25in. from package) C Input Capacitance 3500 V = 0V, V = 25V iss GS DS C Output Capacitance 700 pF f = 1.0MHz oss C Reverse Transfer Capacitance 110 rss C Drain-to-Case Capacitance 12 DC Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 27.4 S A I Pulse Source Current (Body Diode) 110 SM V Diode Forward Voltage 1.9 V T = 25C, I = 27.4A, V = 0V j S GS SD t Reverse Recovery Time 950 ns T = 25C, I = 27.4A, di/dt 100A/s j rr F Q Reverse Recovery Charge 9.0 C V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 0.83 thJC R Case-to-Sink 0.21 C/W thJCS R Junction-to-Ambient 48 Typical socket mount thJA Note: Corresponding Spice and Saber models are available on International Rectifier website. For footnotes refer to the last page 2 www.irf.com