IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Q Results in Simple Drive g V (V) 600 DS Available Requirement R ( )V = 10 V 0.18 DS(on) GS RoHS* Improved Gate, Avalanche and Dynamic dV/dt Q (Max.) (nC) 180 COMPLIANT g Ruggedness Q (nC) 56 gs Fully Characterized Capacitance and Avalanche Voltage Q (nC) 86 gd and Current Configuration Single Enhanced Body Diode dV/dt Capability D Compliant to RoHS Directive 2002/95/EC TO-247AC APPLICATIONS Hard Switching Primary or PFC Switch G Switch Mode Power Supply (SMPS) Uninterruptible Power Supply S High Speed Power Switching D S G Motor Drive N-Channel MOSFET ORDERING INFORMATION Package TO-247AC IRFP27N60KPbF Lead (Pb)-free SiHFP27N60K-E3 IRFP27N60K SnPb SiHFP27N60K ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 27 C Continuous Drain Current V at 10 V I GS D T = 100 C 18 A C a Pulsed Drain Current I 110 DM Linear Derating Factor 4.0 W/C b Single Pulse Avalanche Energy E 530 mJ AS a Repetitive Avalanche Current I 27 A AR a Repetitive Avalanche Energy E 50 mJ AR Maximum Power Dissipation T = 25 C P 500 W C D c Peak Diode Recovery dV/dt dV/dt 13 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 1.4 mH, R = 25 , I = 27 A, dV/dt = 13 V/ns (see fig. 12). J g AS c. I 27 A, dI/dt 390 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91219 www.vishay.com S11-0487-Rev. C, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFP27N60K, SiHFP27N60K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.29 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 640 - mV/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 50 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 16 A - 0.18 0.22 DS(on) GS D Forward Transconductance g V = 50 V, I = 16 A 14 - - S fs DS D Dynamic V = 0 V Input Capacitance C - 4660 - GS iss Output Capacitance C -V = 25 V 460- oss DS Reverse Transfer Capacitance C -41- f = 1.0 MHz, see fig. 5 rss pF V = 0 V V = 1.0 V , f = 1.0 MHz - 5490 - GS DS Output Capacitance C oss V = 0 V V = 480 V , f = 1.0 MHz - 120 - GS DS Effective Output Capacitance C eff. V = 0 V V = 0 V to 480 V - 250 - oss GS DS Total Gate Charge Q - - 180 g I = 27 A, V = 480 V D DS Gate-Source Charge Q --V = 10 V 56 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --86 gd Turn-On Delay Time t -27 - d(on) Rise Time t - 110 - r V = 300 V, I = 27 A DD D ns Turn-Off Delay Time t -43- b d(off) R = 4.3 , V = 10 V, see fig. 10 g GS Fall Time t -38- f Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 27 S showing the A G integral reverse a I - - 110 Pulsed Diode Forward Current S SM p - n junction diode b Body Diode Voltage V T = 25 C, I = 27 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 620 920 ns rr b Body Diode Reverse Recovery Charge Q T = 25 C, I = 27 A, dI/dt = 100 A/s -11 16 C rr J F Reverse Recovery Current I -36 53 A RRM Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80% V . oss oss DS DS www.vishay.com Document Number: 91219 2 S11-0487-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000