IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 400 DS Available Repetitive Avalanche Rated R ()V = 10 V 0.30 DS(on) GS RoHS* Isolated Central Mounting Hole COMPLIANT Q (Max.) (nC) 150 g Fast Switching Q (nC) 23 gs Ease of Paralleling Q (nC) 80 gd Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-247AC package is preferred for commercial-industrial applications where higher power S levels preclude the use of TO-220AB devices. The D S G TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also N-Channel MOSFET provides greater creepage distance between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package TO-247AC IRFP350PbF Lead (Pb)-free SiHFP350-E3 IRFP350 SnPb SiHFP350 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 20 GS T = 25 C 16 C Continuous Drain Current V at 10 V I GS D T = 100 C 10 A C a Pulsed Drain Current I 64 DM Linear Derating Factor 1.5 W/C b Single Pulse Avalanche Energy E 390 mJ AS a Repetitive Avalanche Current I 16 A AR a Repetitive Avalanche Energy E 19 mJ AR Maximum Power Dissipation T = 25 C P 190 W C D c Peak Diode Recovery dV/dt dV/dt 4.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 2.7 mH, R = 25 , I = 16 A (see fig. 12). DD J g AS c. I 16 A, dI/dt 200 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91225 www.vishay.com S11-0448-Rev. B, 14-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFP350, SiHFP350 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) -0.65 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - V DS GS D V /T -0.51 - V Temperature Coefficient Reference to 25 C, I = 1 mA V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 9.6 A - - 0.30 DS(on) GS D b Forward Transconductance g V = 50 V, I = 9.6 A 10 - - S fs DS D Dynamic Input Capacitance C -2600 - iss V = 0 V, GS Output Capacitance C -6V = 25 V, 60- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -250- rss Total Gate Charge Q - - 150 g I = 16 A, V = 320 V, D DS Gate-Source Charge Q --V = 10 V 23 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --80 gd Turn-On Delay Time t -16 - d(on) Rise Time t -49 - V = 200 V, I = 16 A, r DD D ns R = 6.2 , R = 12 g D Turn-Off Delay Time t -87- d(off) b see fig. 10 Fall Time t -47- f D Between lead, Internal Drain Inductance L -5.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -13 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 16 S showing the A integral reverse G a p - n junction diode Pulsed Diode Forward Current I -- 64 SM S b Body Diode Voltage V T = 25 C, I = 16 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 380 570 ns rr b T = 25 C, I = 16 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -4.7 7.1 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91225 2 S11-0448-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000