IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 500 DS Available Repetitive Avalanche Rated R ()V = 10 V 0.27 DS(on) GS RoHS* Isolated Central Mounting Hole Q (Max.) (nC) 210 g COMPLIANT Fast Switching Q (nC) 29 gs Q (nC) 110 Ease of Paralleling gd Configuration Single Simple Drive Requirements D Lead (Pb)-free Available TO-247 DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S The TO-247 package is preferred for commercial-industrial D S G applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the N-Channel MOSFET earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package TO-247 IRFP460PbF Lead (Pb)-free SiHFP460-E3 IRFP460 SnPb SiHFP460 ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 20 GS T = 25 C 20 C Continuous Drain Current V at 10 V I GS D T = 100 C 13 A C a Pulsed Drain Current I 80 DM Linear Derating Factor 2.2 W/C b Single Pulse Avalanche Energy E 960 mJ AS a Repetitive Avalanche Current I 20 A AR a Repetitive Avalanche Energy E 28 mJ AR Maximum Power Dissipation T = 25 C P 280 W C D c Peak Diode Recovery dV/dt dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 4.3 mH, R = 25 , I = 20 A (see fig. 12). DD J G AS c. I 20 A, dI/dt 160 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91237 www.vishay.com S-81360-Rev. A, 28-Jul-08 1IRFP460, SiHFP460 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.45 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.63 - DS DS J D V/C V = V , I = 250 A 2.0 - 4.0 V Gate-Source Threshold Voltage V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 12 A -- 0.27 DS(on) GS D b Forward Transconductance g V = 50 V, I = 12 A 13 - - S fs DS D Dynamic Input Capacitance C - 4200 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 870- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -350- rss Total Gate Charge Q - - 210 g I = 20 A, V = 400 V D DS Gate-Source Charge Q --V = 10 V 29 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --110 gd Turn-On Delay Time t -18 - d(on) Rise Time t -59 - r V = 250 V, I = 20 A , DD D ns b Turn-Off Delay Time t -R = 4.3 , R = 13 , see fig. 10110- G D d(off) Fall Time t -58- f D Between lead, Internal Drain Inductance L -5.0 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -13 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 20 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 80 SM S b Body Diode Voltage V T = 25 C, I = 20 A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 570 860 ns rr b T = 25 C, I = 20A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -5.7 8.6 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91237 2 S-81360-Rev. A, 28-Jul-08