X-On Electronics has gained recognition as a prominent supplier of IRFP4332PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFP4332PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFP4332PBF Infineon

Name: IRFP4332PBF
Brand: Infineon
SKU: IRFP4332PBF_Infineon
Availability: InStock
Rating: 5 (11 reviews)

IRFP4332PBF electronic component of Infineon

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See Product Specifications

Part No.	IRFP4332PBF
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET N Trench 250V 57A (Tc) 5V @ 250uA 33 mÎ© @ 35A,10V TO-247 RoHS
Datasheet:	IRFP4332PBF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 4.788 ea
Line Total: USD 4.79

Availability - 176
Ship by Fri. 09 May to Wed. 14 May

MOQ: 1 Multiples: 1
Pack Size: 1

IRFP4332PBF More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

3928

Ship by Fri. 02 May to Thu. 08 May

MOQ : 109
Multiples : 25

109 : USD 2.379
375 : USD 2.25
625 : USD 2.2375
1250 : USD 2.2

176

Ship by Fri. 09 May to Wed. 14 May

MOQ : 1
Multiples : 1

1 : USD 4.788
10 : USD 2.7845
25 : USD 2.1667
100 : USD 1.8808
450 : USD 1.7507
900 : USD 1.6938

42

Ship by Wed. 30 Apr to Fri. 02 May

MOQ : 1
Multiples : 1

1 : USD 6.58
6 : USD 3.612
15 : USD 3.416
400 : USD 3.29

Specifications

Manufacturer

Infineon Infineon

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

57 A 57 A

Vds - Drain-Source Breakdown Voltage

250 V 250 V

Rds On - Drain-Source Resistance

33 mOhms 33 mOhms

Transistor Polarity

N - Channel N - Channel

Minimum Operating Temperature

- 40 C - 40 C

Maximum Operating Temperature

+ 175 C + 175 C

Pd - Power Dissipation

360 W 360 W

Mounting Style

Through Hole Through Hole

Package / Case

TO - 247AC TO - 247AC

Packaging

Tube Tube

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

30 V 30 V

Qg - Gate Charge

99 nC 99 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Brand

Infineon Infineon

Continuous Drain Current

57 A 57 A

Drain-Source Breakdown Voltage

250 V 250 V

Forward Transconductance - Min

100 S 100 S

Gate-Source Breakdown Voltage

+/- 30 V +/- 30 V

Power Dissipation

360 W 360 W

Rds On

33 Mohms 33 Mohms

Gate Charge Qg

99 nC 99 nC

Factory Pack Quantity :

25 25

Height

20.7 mm 20.7 mm

Length

15.87 mm 15.87 mm

Transistor Type

1 N - Channel 1 N - Channel

Width

5.31 mm 5.31 mm

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the IRFP4332PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFP4332PBF and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Infineon IRFP4332PBF is a trench MOSFET with N-channel and 250V of drain-source voltage (Vds). It has a 57A (Tc) continuous current and a 5V gate-source voltage (Vgs). It has a low drain-source on-resistance of 33 mOhm at a continuous drain current of 35A, making it ideal for high and efficient power switching applications. The device has a low gate charge of 250uA, allowing for fast switching speeds. It comes in the standard TO-247 package and is compliant with RoHS standards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

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CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Availability	Price	Buy Price	Quantity
3928 Ship by Fri. 02 May to Thu. 08 May MOQ : 109 Multiples : 25	109 : USD 2.379 375 : USD 2.25 625 : USD 2.2375 1250 : USD 2.2

176 Ship by Fri. 09 May to Wed. 14 May MOQ : 1 Multiples : 1	1 : USD 4.788 10 : USD 2.7845 25 : USD 2.1667 100 : USD 1.8808 450 : USD 1.7507 900 : USD 1.6938

42 Ship by Wed. 30 Apr to Fri. 02 May MOQ : 1 Multiples : 1	1 : USD 6.58 6 : USD 3.612 15 : USD 3.416 400 : USD 3.29

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