IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge V (V) 500 DS Reduced Gate Drive Requirement Available R ()V = 10 V 0.27 DS(on) GS Enhanced 30 V V Rating GS RoHS* Q (Max.) (nC) 120 g COMPLIANT Reduced C , C , C iss oss rss Q (nC) 32 gs Isolated Central Mounting Hole Q (nC) 49 gd Dynamic dV/dt Rating Configuration Single Repetitive Avalanche Rated Lead (Pb)-free Available D DESCRIPTION TO-247 This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device G improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven S D ruggedness and reliabiltity of Power MOSFETs offer the S G designer a new standard in power transistors for switching N-Channel MOSFET applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. ORDERING INFORMATION Package TO-247 IRFP460LCPbF Lead (Pb)-free SiHFP460LC-E3 IRFP460LC SnPb SiHFP460LC ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 20 C Continuous Drain Current V at 10 V I GS D T = 100 C 12 A C a Pulsed Drain Current I 80 DM Linear Derating Factor 2.2 W/C b Single Pulse Avalanche Energy E 960 mJ AS a Repetitive Avalanche Current I 20 A AR a Repetitive Avalanche Energy E 28 mJ AR Maximum Power Dissipation T = 25 C P 280 W C D c Peak Diode Recovery dV/dt dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 4.3 mH, R = 25 , I = 20 A (see fig. 12). DD J G AS c. I 20 A, dI/dt 160 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91235 www.vishay.com S-81360-Rev. A, 28-Jul-08 1IRFP460LC, SiHFP460LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -- thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.45 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.59 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 12 A -- 0.27 DS(on) GS D b Forward Transconductance g V = 50 V, I = 12 A 12 - - S fs DS D Dynamic Input Capacitance C - 3600 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 440- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -39- rss Total Gate Charge Q - - 120 g I = 20 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 32 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --49 gd Turn-On Delay Time t -18 - d(on) Rise Time t -77 - r V = 250 V, I = 20 A DD D ns b R = 4.3 , R = 12 , see fig. 10 G D Turn-Off Delay Time t -40- d(off) Fall Time t -43- f D Between lead, Internal Drain Inductance L -5.0 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -13 - S die contact S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 20 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 80 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 20 A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 570 860 ns rr b T = 25 C, I = 20 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -6.6 9.9 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91235 2 S-81360-Rev. A, 28-Jul-08