X-On Electronics has gained recognition as a prominent supplier of IRFP460LCPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFP460LCPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFP460LCPBF Vishay

Hot IRFP460LCPBF electronic component of Vishay
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Part No.IRFP460LCPBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET RECOMMENDED ALT 844-IRFP460LCPBF
Datasheet: IRFP460LCPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
13: USD 2.522 ea
Line Total: USD 32.79 
Availability - 298
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 13  Multiples: 1
Pack Size: 1
Availability Price Quantity
116
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 14.8157
5 : USD 12.4816
10 : USD 10.344
50 : USD 8.9145
100 : USD 8.2294
250 : USD 7.6781

298
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 13
Multiples : 1
13 : USD 2.522
30 : USD 2.522
125 : USD 2.522
300 : USD 2.522
1250 : USD 2.522

1507
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 5.137
10 : USD 4.95
25 : USD 4.708

372
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 6.216
6 : USD 2.954
16 : USD 2.786

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IRFP460LCPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFP460LCPBF and other electronic components in the MOSFETs category and beyond.

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IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge V (V) 500 DS Reduced Gate Drive Requirement Available R ()V = 10 V 0.27 DS(on) GS Enhanced 30 V V Rating GS RoHS* Q (Max.) (nC) 120 g COMPLIANT Reduced C , C , C iss oss rss Q (nC) 32 gs Isolated Central Mounting Hole Q (nC) 49 gd Dynamic dV/dt Rating Configuration Single Repetitive Avalanche Rated Lead (Pb)-free Available D DESCRIPTION TO-247 This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device G improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven S D ruggedness and reliabiltity of Power MOSFETs offer the S G designer a new standard in power transistors for switching N-Channel MOSFET applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. ORDERING INFORMATION Package TO-247 IRFP460LCPbF Lead (Pb)-free SiHFP460LC-E3 IRFP460LC SnPb SiHFP460LC ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 20 C Continuous Drain Current V at 10 V I GS D T = 100 C 12 A C a Pulsed Drain Current I 80 DM Linear Derating Factor 2.2 W/C b Single Pulse Avalanche Energy E 960 mJ AS a Repetitive Avalanche Current I 20 A AR a Repetitive Avalanche Energy E 28 mJ AR Maximum Power Dissipation T = 25 C P 280 W C D c Peak Diode Recovery dV/dt dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 4.3 mH, R = 25 , I = 20 A (see fig. 12). DD J G AS c. I 20 A, dI/dt 160 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91235 www.vishay.com S-81360-Rev. A, 28-Jul-08 1IRFP460LC, SiHFP460LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -- thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.45 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.59 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 12 A -- 0.27 DS(on) GS D b Forward Transconductance g V = 50 V, I = 12 A 12 - - S fs DS D Dynamic Input Capacitance C - 3600 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 440- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -39- rss Total Gate Charge Q - - 120 g I = 20 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 32 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --49 gd Turn-On Delay Time t -18 - d(on) Rise Time t -77 - r V = 250 V, I = 20 A DD D ns b R = 4.3 , R = 12 , see fig. 10 G D Turn-Off Delay Time t -40- d(off) Fall Time t -43- f D Between lead, Internal Drain Inductance L -5.0 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -13 - S die contact S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 20 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 80 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 20 A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 570 860 ns rr b T = 25 C, I = 20 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -6.6 9.9 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91235 2 S-81360-Rev. A, 28-Jul-08

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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