X-On Electronics has gained recognition as a prominent supplier of IRFPC60LCPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFPC60LCPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFPC60LCPBF Vishay

Hot IRFPC60LCPBF electronic component of Vishay
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Part No.IRFPC60LCPBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 600 V 16A (Tc) 280W (Tc) Through Hole TO-247AC
Datasheet: IRFPC60LCPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.152 ea
Line Total: USD 5.15 
Availability - 88
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
194
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 9
Multiples : 1
9 : USD 3.484
25 : USD 3.484
75 : USD 3.484
250 : USD 3.484
750 : USD 3.484

940
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 4.62
10 : USD 4.18
25 : USD 4.026
500 : USD 4.015

88
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 5.152
5 : USD 3.528
14 : USD 3.332

   
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We are delighted to provide the IRFPC60LCPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFPC60LCPBF and other electronic components in the MOSFETs category and beyond.

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IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge V (V) 600 DS Available Reduced Gate Drive Requirement R ()V = 10 V 0.40 Enhanced 30 V V Rating DS(on) GS GS RoHS* COMPLIANT Reduced C , C , C Q (Max.) (nC) 120 iss oss rss g Isolated Central Mounting Hole Q (nC) 29 gs Dynamic dV/dt Rated Q (nC) 48 gd Repetitive Avalanche Rated Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION This new series of low charge Power MOSFETs achieve TO-247AC significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, G faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of Power MOSFETs offer the designer a new standart in power transistors for switching S D S applications. G The TO-247AC package is preferred for N-Channel MOSFET commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. ORDERING INFORMATION Package TO-247AC IRFPC60LCPbF Lead (Pb)-free SiHFPC60LC-E3 IRFPC60LC SnPb SiHFPC60LC ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 16 C Continuous Drain Current V at 10 V I GS D T = 100 C 10 A C a Pulsed Drain Current I 64 DM Linear Derating Factor 2.2 W/C b Single Pulse Avalanche Energy E 1000 mJ AS a Repetitive Avalanche Current I 16 A AR a Repetitive Avalanche Energy E 28 mJ AR Maximum Power Dissipation T = 25 C P 280 W C D c Peak Diode Recovery dV/dt dV/dt 3.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 7.2 mH, R = 25 , I = 16 A (see fig. 12). DD J g AS c. I 16 A, dI/dt 140 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91244 www.vishay.com S11-0443-Rev. B, 14-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFPC60LC, SiHFPC60LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.45 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.63 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 9.6 A - - 0.40 DS(on) GS D Forward Transconductance g V = 50 V, I = 9.6 A 11 - - S fs DS D Dynamic Input Capacitance C - 3500 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 400- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -39- rss Total Gate Charge Q - - 120 g I = 16 A, V = 360 V, D DS V = 10 V nC Gate-Source Charge Q --29 gs GS b see fig. 6 and 13 Gate-Drain Charge Q -- 48 gd Turn-On Delay Time t -17 - d(on) Rise Time t -57 - r V = 300 V, I = 16 A, DD D ns b R = 4.3 , R = 18 , see fig. 10 g D Turn-Off Delay Time t -43- d(off) Fall Time t -38- f D Between lead, Internal Drain Inductance L -5.0 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L die contact -13 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 16 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 64 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I = 16 A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 650 980 ns rr T = 25 C, I = 16 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -6.0 9.0 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91244 2 S11-0443-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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