IRFPE40 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) 800 DS Repetitive avalanche rated R ()V = 10 V 2.0 DS(on) GS Isolated central mounting hole Q (Max.) (nC) 130 g Q (nC) 17 Fast switching gs Q (nC) 72 gd Ease of paralleling Configuration Single Simple drive requirements D Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TO-247AC DESCRIPTION Third generation power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S D The TO-247AC package is preferred for S G commercial-industrial applications where higher power N-Channel MOSFET levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package TO-247AC Lead (Pb)-free IRFPE40PbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 800 DS V Gate-Source Voltage V 20 GS T = 25 C 5.4 C Continuous Drain Current V at 10 V I GS D T = 100 C 3.4 A C a Pulsed Drain Current I 22 DM Linear Derating Factor 1.2 W/C b Single Pulse Avalanche Energy E 490 mJ AS a Repetitive Avalanche Current I 5.4 A AR a Repetitive Avalanche Energy E 15 mJ AR Maximum Power Dissipation T = 25 C P 150 W C D c Peak Diode Recovery dV/dt dV/dt 2.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 31 mH, R = 25 , I = 5.4 A (see fig. 12). DD J g AS c. I 5.4 A, dI/dt 120 A/s, V 600, T 150 C. SD DD J d. 1.6 mm from case. S15-1038-Rev. C, 04-May-15 Document Number: 91247 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFPE40 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.83 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 800 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.98 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 800 V, V = 0 V - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = 640 V, V = 0 V, T = 125 C - - 500 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 3.2 A -- 2.0 DS(on) GS D b Forward Transconductance g V = 100 V, I = 3.2 A 3.0 - - S fs DS D Dynamic Input Capacitance C - 1900 - iss V = 0 V, GS Output Capacitance C -4V = 25 V, 70- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -280- rss Total Gate Charge Q - - 130 g I = 5.4 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 17 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --72 gd Turn-On Delay Time t -16 - d(on) Rise Time t -36 - r V = 400 V, I = 5.4 A, DD D ns b R = 9.1 , R = 75 , see fig. 10 Turn-Off Delay Time t -1g D 00- d(off) Fall Time t -32- f Internal Drain Inductance L -5.0 - D D Between lead, 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -13 - S die contact S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 5.4 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 22 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I = 5.4 A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 550 830 ns rr b T = 25 C, I = 5.4 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -2.4 3.6 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S15-1038-Rev. C, 04-May-15 Document Number: 91247 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000