IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Q Results in Simple Drive g V (V) 500 DS Requirement Available R (Max.) ( )V = 10 V 0.13 DS(on) GS RoHS* Improved Gate, Avalanche and Dynamic dV/dt Q (Max.) (nC) 180 g COMPLIANT Ruggedness Q (nC) 46 gs Fully Characterized Capacitance and Avalanche Voltage Q (nC) 71 gd and Current Configuration Single Effective C Specified oss D Compliant to RoHS Directive 2002/95/EC Super-247 APPLICATIONS Switch Mode Power Supply (SMPS) G Uninterruptible Power Supply S D High Speed Power Switching G S TYPICAL SMPS TOPOLOGIES N-Channel MOSFET Full Bridge Converters Power Factor Correction Boost ORDERING INFORMATION Package Super-247 IRFPS37N50APbF Lead (Pb)-free SiHFPS37N50A-E3 IRFPS37N50A SnPb SiHFPS37N50A ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 36 C Continuous Drain Current V at 10 V I GS D T = 100 C 23 A C a Pulsed Drain Current I 144 DM Linear Derating Factor 3.6 W/C b Single Pulse Avalanche Energy E 1260 mJ AS a Repetitive Avalanche Current I 36 A AR a Repetitive Avalanche Energy E 44 mJ AR Maximum Power Dissipation T = 25 C P 446 W C D c Peak Diode Recovery dV/dt dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 1.94 mH, R = 25 , I = 36 A (see fig. 12). J g AS c. I 36 A, dI/dt 145 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91258 www.vishay.com S11-0111-Rev. C, 07-Feb-11 1IRFPS37N50A, SiHFPS37N50A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.28 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 22 A - - 0.13 DS(on) GS D b Forward Transconductance g V = 50 V, I = 22 A 20 - - S fs DS D Dynamic Input Capacitance C - 5579 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 810- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -36- rss pF = 1.0 V , f = 1.0 MHz - 7905 - V DS Output Capacitance C oss V = 0 V V = 400 V , f = 1.0 MHz - 221 - GS DS Effective Output Capacitance C eff. V = 0 V to 400 V - 400 - oss DS Total Gate Charge Q - - 180 g I = 36 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 46 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --71 gd Turn-On Delay Time t -23 - d(on) Rise Time t V = 250 V, I = 36 A, -98 - r DD D ns R = 2.15 , R = 7.0 G D Turn-Off Delay Time t -52- d(off) b see fig. 10 Fall Time t -80- f Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 36 S showing the A G integral reverse a Pulsed Diode Forward Current I - - 144 S SM p - n junction diode b Body Diode Voltage V T = 25 C, I = 36 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 570 860 ns rr b T = 25 C, I = 36 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 8.6 13 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS www.vishay.com Document Number: 91258 2 S11-0111-Rev. C, 07-Feb-11