IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Q Results in Simple Drive g V (V) 600 DS Available Requirement R ( )V = 10 V 0.110 DS(on) GS RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Q (Max.) (nC) 330 g Ruggedness Q (nC) 84 gs Fully Characterized Capacitance and Avalanche Voltage Q (nC) 150 gd and Current Configuration Single Enhanced Body Diode dV/dt Capability D Compliant to RoHS Directive 2002/95/EC Super-247 APPLICATIONS Hard Switching Primary or PFC Switch G Switch Mode Power Supply (SMPS) S Uninterruptible Power Supply D S G High Speed Power Switching N-Channel MOSFET Motor Drive ORDERING INFORMATION Package Super-247 IRFPS40N60KPbF Lead (Pb)-free SiHFPS40N60K-E3 IRFPS40N60K SnPb SiHFPS40N60K ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 40 C Continuous Drain Current V at 10 V I GS D T = 100 C 24 A C a Pulsed Drain Current I 160 DM Linear Derating Factor 4.5 W/C b Single Pulse Avalanche Energy E 600 mJ AS a Repetitive Avalanche Current I 40 A AR a Repetitive Avalanche Energy E 57 mJ AR Maximum Power Dissipation T = 25 C P 570 W C D c Peak Diode Recovery dV/dt dV/dt 7.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 0.84 mH, R = 25 , I = 38 A, dV/dt = 5.5 V/ns (see fig. 12a). J g AS c. I 38 A, dI/dt 150 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91261 www.vishay.com S11-0112-Rev. B, 31-Jan-11 1IRFPS40N60K, SiHFPS40N60K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - C/W thCS Maximum Junction-to-Case (Drain) R -0.22 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.63 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 50 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 24 A - 0.110 0.130 DS(on) GS D b Forward Transconductance g V = 50 V, I = 24 A 21 - - S fs DS D Dynamic Input Capacitance C - 7970 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 750- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -75- rss pF V = 1.0 V , f = 1.0 MHz - 9440 - DS Output Capacitance C oss V = 0 V V = 480 V , f = 1.0 MHz - 200 - GS DS c Effective Output Capacitance C eff. V = 0 V to 480 V - 260 - oss DS Total Gate Charge Q - - 330 g I = 38 A, V = 480 V, D DS Gate-Source Charge Q --84 nC gs b see fig. 6 and 13 Gate-Drain Charge Q --150 gd Turn-On Delay Time t V = 10 V -47 - d(on) GS Rise Time t - 110 - r V = 300 V, I = 38 A, DD D ns b Turn-Off Delay Time t -9R = 4.3 , see fig. 107- d(off) G Fall Time t -60- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 40 S showing the A integral reverse G a Pulsed Diode Forward Current I - - 160 p - n junction diode S SM b Body Diode Voltage V T = 25 C, I = 38 A, V = 0 V -- 1.5 V SD J S GS T = 25 C - 630 950 J Body Diode Reverse Recovery Time t ns rr T = 125 C - 730 1090 J I = 38 A, dI/dt = 100 F A/s T = 25 C - 14 20 J Body Diode Reverse Recovery Charge Q C rr T = 125 C - 17 25 J Body Diode Recovery Current I T = 25 C - 39 58 A RRM J Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS www.vishay.com Document Number: 91261 2 S11-0112-Rev. B, 31-Jan-11