X-On Electronics has gained recognition as a prominent supplier of IRFR024TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFR024TRPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFR024TRPBF Vishay

IRFR024TRPBF electronic component of Vishay
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See Product Specifications
Part No.IRFR024TRPBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 60 V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
Datasheet: IRFR024TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.5804 ea
Line Total: USD 1160.8 
Availability - 1940
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
2739
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 1.587
10 : USD 1.1109
100 : USD 0.8913

1002
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 13
Multiples : 1
13 : USD 0.8618
25 : USD 0.8576
100 : USD 0.7284
250 : USD 0.7211
500 : USD 0.6431
1000 : USD 0.5908

1940
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.5804

   
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We are delighted to provide the IRFR024TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFR024TRPBF and other electronic components in the MOSFETs category and beyond.

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IRFR024, IRFU024, SiHFR024, SiHFU024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating DPAK IPAK Surface-mount (IRFR024, SiHFR024) (TO-252) (TO-251) Straight lead (IRFU024, SiHFU024) D Available in tape and reel D G Fast switching Available Ease of paralleling S Simple drive requirements G S D G Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 N-Channel MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the PRODUCT SUMMARY designer with the best combination of fast switching, ruggedized device design, low on-resistance and V (V) 60 DS cost-effectiveness. R ()V = 10 V 0.10 DS(on) GS The DPAK is designed for surface mounting using vapor Q max. (nC) 25 g phase, infrared, or wave soldering techniques. The straight Q (nC) 5.8 gs lead version (IRFU, SiHFU series) is for through-hole Q (nC) 11 gd mounting applications. Power dissipation levels up to 1.5 W Configuration Single are possible in typical surface mount applications. ORDERING INFORMATION PACKAGE DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free ab SiHFR024-GE3 SiHFR024TR-GE3 SiHFR024TRL-GE3 IRFR024TRPbF-BE3 SiHFU024-GE3 and halogen-free a a Lead (Pb)-free IRFR024PbF IRFR024TRPbF IRFR024TRLPbF IRFR024TRRPbF IRFU024PbF Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 60 DS V Gate-source voltage V 20 GS T = 25 C 14 C Continuous drain current V at 10 V I GS D T = 100 C 9.0 A C a Pulsed drain current I 56 DM Linear derating factor 0.33 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 91 mJ AS Maximum power dissipation T = 25 C 42 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.5 A c Peak diode recovery dV/dt dV/dt 5.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 541 H, R = 25 , I = 14 A (see fig. 12) DD J g AS c. I 17 A, dI/dt 110 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0466-Rev. E, 17-May-2021 Document Number: 91264 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFR024, IRFU024, SiHFR024, SiHFU024 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R - - 110 thJA a Maximum junction-to-ambient (PCB mount) R -- 50 C/W thJA Maximum junction-to-case (drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.073 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 48 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 8.4 A - - 0.10 DS(on) GS D b Forward transconductance g V = 25 V, I = 8.4 A 6.2 - - S fs DS D Dynamic Input capacitance C - 640 - iss V = 0 V, GS Output capacitance C -V = 25 V, 360- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -79- rss Total gate charge Q -- 25 g I = 17 A, V = 48 V, D DS Gate-source charge Q --V = 10 V 5.8 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --11 gd Turn-on delay time t -13 - d(on) Rise time t -58 - r V = 30 V, I = 17A, DD D ns b R = 18 , R = 1.7 , see fig. 10 Turn-off delay time t -2G D 5- d(off) Fall time t -42- f D Internal drain inductance L Between lead, -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal source inductance L -7.5 - S die contact S Drain-source body diode characteristics MOSFET symbol Continuous source-drain diode current I D -- 14 S showing the A G integral reverse a Pulsed diode forward current I -- 56 SM S p - n junction diode b Body diode voltage V T = 25 C, I = 14 A, V = 0 V -- 1.5 V SD J S GS Body diode reverse recovery time t - 88 180 ns rr b T = 25 C, I = 17 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.29 0.64 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0466-Rev. E, 17-May-2021 Document Number: 91264 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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