X-On Electronics has gained recognition as a prominent supplier of IRFR120TRLPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFR120TRLPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFR120TRLPBF Vishay

IRFR120TRLPBF electronic component of Vishay
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See Product Specifications
Part No.IRFR120TRLPBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Chan 100V 7.7 Amp
Datasheet: IRFR120TRLPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.639 ea
Line Total: USD 1.64 
Availability - 3880
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3880
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.639
10 : USD 1.254
100 : USD 0.9218
500 : USD 0.7711
1000 : USD 0.7205

1862
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 12
Multiples : 1
12 : USD 0.845
25 : USD 0.8366
100 : USD 0.7644
250 : USD 0.7612
500 : USD 0.7457
1000 : USD 0.7304

2910
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.7231

   
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We are delighted to provide the IRFR120TRLPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFR120TRLPBF and other electronic components in the MOSFETs category and beyond.

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IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating DPAK IPAK Repetitive avalanche rated (TO-252) (TO-251) Surface-mount (IRFR120, SiHFR120) D Straight lead (IRFU120, SiHFU120) D G Available in tape and reel Available Fast switching S G S Ease of paralleling D G S Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the PRODUCT SUMMARY designer with the best combination of fast switching, V (V) 100 DS ruggedized device design, low on-resistance and R ()V = 10 V 0.27 DS(on) GS cost-effectiveness. Q max. (nC) 16 g The DPAK is designed for surface mounting using vapor Q (nC) 4.4 gs phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole Q (nC) 7.7 gd mounting applications. Power dissipation levels up to 1.5 W Configuration Single are possible in typical surface mount applications. ORDERING INFORMATION PACKAGE DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a a a SiHFR120-GE3 SiHFR120TR-GE3 SiHFR120TRR-GE3 SiHFR120TRL-GE3 SiHFU120-GE3 Lead (Pb)-free IRFR120PbF-BE3 IRFR120TRPbF-BE3 IRFR120TRRPbF-BE3 IRFR120TRLPbF-BE3 and halogen-free - b ab ab ab a a a Lead (Pb)-free IRFR120PbF IRFR120TRPbF IRFR120TRRPbF IRFR120TRLPbF IRFU120PbF Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 100 DS V Gate-source voltage V 20 GS T = 25 C 7.7 C at 10 V I Continuous drain current V GS D T = 100 C 4.9 A C a Pulsed drain current I 31 DM Linear derating factor 0.33 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 210 mJ AS a Repetitive avalanche Current I 7.7 A AR a Repetitive avalanche Energy E 4.2 mJ AR Maximum power dissipation T = 25 C 42 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.5 A c Peak diode recovery dV/dt dV/dt 5.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 5.3 mH, R = 25 , I = 7.7 A (see fig. 12). DD J g AS c. I 9.2 A, dI/dt 110 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S21-0466-Rev. D, 17-May-2021 Document Number: 91266 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R - - 110 thJA a Maximum junction-to-ambient (PCB mount) R -- 50 C/W thJA Maximum junction-to-case (drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.13 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 80 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 4.6 A - - 0.27 DS(on) GS D Forward transconductance g V = 50 V, I = 4.6 A 1.6 - - S fs DS D Dynamic Input capacitance C - 360 - iss V = 0 V, GS Output capacitance C -V = 25 V, 150- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -34- rss Total gate charge Q -- 16 g I = 9.2 A, V = 80 V, D DS Gate-source charge Q --V = 10 V 4.4 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --7.7 gd Turn-on delay time t -6.8 - d(on) Rise time t -27 - r V = 50 V, I = 9.2 A, DD D ns b R = 18 , R = 5.2 , see fig. 10 Turn-off delay time t -1g D 8- d(off) Fall time t -17- f Internal drain inductance R f = 1 MHz, open drain 1.0 - 5.0 g D Internal source inductance L Between lead, -4.5 - D 6 mm (0.25 ) from nH G package and center of Input capacitance L -7.5 - S die contact S Drain-source body diode characteristics MOSFET symbol D Continuous source-drain diode current I -- 7.7 S showing the A G integral reverse a Pulsed diode forward current I -- 31 SM S p - n junction diode b Body diode voltage V T = 25 C, I = 7.7 A, V = 0 V -- 2.5 V SD J S GS Body diode reverse recovery time t - 130 260 ns rr b T = 25 C, I = 9.2 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 0.65 1.3 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S21-0466-Rev. D, 17-May-2021 Document Number: 91266 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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