IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET D FEATURES Dynamic dV/dt rating DPAK IPAK Repetitive avalanche rated (TO-252) (TO-251) Surface-mount (IRFR210, SiHFR210) D D G Straight lead (IRFU210, SiHFU210) Available in tape and reel Available S Fast switching G S D G Ease of paralleling S Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 DESCRIPTION PRODUCT SUMMARY Third generation power MOSFETs from Vishay provide the V (V) 200 DS designer with the best combination of fast switching, R ()V = 10 V 1.5 ruggedized device design, low on-resistance and DS(on) GS cost-effectiveness. Q max. (nC) 8.2 g The DPAK is designed for surface mounting using vapor Q (nC) 1.8 gs phase, infrared, or wave soldering techniques. The straight Q (nC) 4.5 gd lead version (IRFU, SiHFU series) is for through-hole Configuration Single mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION PACKAGE DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and a a SiHFR210-GE3 SiHFR210TRL-GE3 - SiHFR210TRR-GE3 SiHFU210-GE3 halogen-free a a Lead (Pb)-free IRFR210PbF IRFR210TRLPbF IRFR210TRPbF IRFR210TRRPbF IRFU210PbF Lead (Pb)-free and ab ab ab IRFR210PbF-BE3 IRFR210TRLPbF-BE3 IRFR210TRPbF-BE3-- halogen-free Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 200 DS V Gate-source voltage V 20 GS T = 25 C 2.6 C Continuous drain current V at 10 V I GS D A T = 100 C 1.7 C a Pulsed drain current I 10 DM Linear derating factor 0.20 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche Energy E 95 mJ AS a Avalanche current I 2.7 A AR a Repetitive avalanche energy E 2.5 mJ AR Maximum power dissipation T = 25 C 25 C P W D e T = 25 C 2.5 Maximum power dissipation (PCB mount) A c Peak diode recovery dV/dt dV/dt 5.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V, starting T = 25 C, L = 28 mH, R = 25 , I = 2.6 A (see fig. 12) DD J g AS c. I 2.6 A, dI/dt 70 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0373-Rev. F, 19-Apr-2021 Document Number: 91268 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R -- 110 thJA a Maximum junction-to-ambient (PCB mount) R -- 50 C/W thJA Maximum junction-to-case (drain) R -- 5.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 200 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.30 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS = 160 V, V = 0 V, T = 125 C - - 250 V DS GS J b Drain-source on-state resistance R V = 10 V I = 1.6 A -- 1.5 DS(on) GS D b Forward transconductance g V = 50 V, I = 1.6 A 0.80 - - S fs DS D Dynamic Input capacitance C -140 - iss V = 0 V, GS Output capacitance C -5V = 25 V, 3- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -15- rss Total gate charge Q -- 8.2 g I = 3.3 A, V = 160 V, D DS Gate-source charge Q --V = 10 V 1.8 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --4.5 gd Turn-on delay time t -8.2 - d(on) Rise time t -17 - r V = 100 V, I = 3.3 A, DD D ns b R = 24 , R = 30 , see fig. 10 g D Turn-off delay time t -14- d(off) Fall time t -8.9- f D Internal drain inductance L Between lead, -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L -7.5 - S die contact S Drain-source body diode characteristics D Continuous source-drain diode current I MOSFET symbol -- 2.6 S showing the A G a integral reverse Pulsed diode forward current I -- 10 SM S p - n junction diode b Body diode voltage V T = 25 C, I = 2.6 A, V = 0 V -- 2.0 V SD J S GS Body diode reverse recovery time t - 150 310 ns rr b T = 25 C, I = 3.3 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 0.60 1.4 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0373-Rev. F, 19-Apr-2021 Document Number: 91268 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000