X-On Electronics has gained recognition as a prominent supplier of IRFR224TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFR224TRPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFR224TRPBF Vishay

IRFR224TRPBF electronic component of Vishay
IRFR224TRPBF Vishay
IRFR224TRPBF MOSFETs
IRFR224TRPBF  Semiconductors

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See Product Specifications
Part No. IRFR224TRPBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 250 V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
Datasheet: IRFR224TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8375 ea
Line Total: USD 1.84 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 250
Multiples : 1
250 : USD 1.0895
500 : USD 1.0067
1000 : USD 0.9667
2500 : USD 0.8956
5000 : USD 0.8607
7500 : USD 0.84
10000 : USD 0.8271

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 2000
Multiples : 2000
2000 : USD 0.8746
6000 : USD 0.7976
10000 : USD 0.7677

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 1
Multiples : 1
1 : USD 2.0697
10 : USD 1.7696
100 : USD 1.3794
500 : USD 1.1395
1000 : USD 0.8996

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 1
Multiples : 1
1 : USD 2.0697
10 : USD 1.7696
100 : USD 1.3794
500 : USD 1.1395
1000 : USD 0.8996

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 2000
Multiples : 2000
2000 : USD 0.4953
4000 : USD 0.4654
8000 : USD 0.4554
12000 : USD 0.4452
16000 : USD 0.4352
20000 : USD 0.42
200000 : USD 0.4049

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 1
Multiples : 1
1 : USD 1.6122
10 : USD 1.2862
25 : USD 1.234
50 : USD 1.1921
100 : USD 1.1294
250 : USD 1.098

0
Ship by Wed. 14 May to Mon. 19 May
MOQ : 1
Multiples : 1
1 : USD 1.092
10 : USD 0.9173
30 : USD 0.8311
100 : USD 0.7466
500 : USD 0.6949
1000 : USD 0.668
2000 : USD 0.6601
4000 : USD 0.6564

0
Ship by Mon. 05 May to Wed. 07 May
MOQ : 1
Multiples : 1
1 : USD 1.8375
10 : USD 1.248
25 : USD 1.0718
100 : USD 0.9086
250 : USD 0.9075
500 : USD 0.8998
1000 : USD 0.8085
2000 : USD 0.6809
4000 : USD 0.6644

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 56
Multiples : 1
56 : USD 1.1647
56 : USD 1.1534
57 : USD 1.1422
100 : USD 1.131
250 : USD 1.1198

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 250
Multiples : 1
250 : USD 0.6362

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 12
Multiples : 1
12 : USD 0.6564
25 : USD 0.6434

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 250
Multiples : 1
250 : USD 0.6564

   
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We are delighted to provide the IRFR224TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFR224TRPBF and other electronic components in the MOSFETs category and beyond.

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IRFR224, IRFU224, SiHFR224, SiHFU224 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating DPAK IPAK Repetitive avalanche rated (TO-252) (TO-251) Surface-mount (IRFR224, SiHFR224) D D Straight lead (IRFU224, SiHFU224) G Available in tape and reel Available Fast switching S G S D Ease of paralleling G S Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 DESCRIPTION PRODUCT SUMMARY Third generation power MOSFETs form Vishay provide the V (V) 250 DS designer with the best combination of fast switching, R ()V = 10 V 1.1 DS(on) GS ruggedized device design, low on-resistance, and Q (Max.) (nC) 14 cost-effectiveness. g Q (nC) 2.7 gs The DPAK is designed for surface mounting using vapor Q (nC) 7.8 phase, infrared, or wave solderig techniques. The straight gd lead version (IRFU, SiHFU series) is for through-hole Configuration Single mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) SiHFR224-GE3 SiHFR224TR-GE3 SiHFR224TRL-GE3 SiHFU224-GE3 Lead (Pb)-free and halogen-free IRFR224TRPbF-BE3 - - - a a IRFR224PbF IRFR224TRPbF IRFR224TRLPbF IRFU224PbF Lead (Pb)-free IRFR224TRRPbF - - - Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 250 DS V Gate-source voltage V 20 GS T = 25 C 3.8 C Continuous drain current V at 10 V I GS D T = 100 C 2.4 A C a Pulsed drain current I 15 DM Linear derating factor 0.33 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 130 mJ AS a Repetitive avalanche current I 3.8 A AR a Repetitive avalanche energy E 4.2 mJ AR Maximum power dissipation t = 25 c 42 c P W D e Maximum power dissipation (pcb mount) t = 25 c 2.5 a c Peak diode recovery dV/dt dV/dt 4.8 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V starting T = 25 C, L = 14 mH, R = 25 , I = 3.8 A (see fig. 12) DD J g AS c. I 3.8 A, dI/dt 90 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0373-Rev. D, 19-Apr-2021 Document Number: 91271 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFR224, IRFU224, SiHFR224, SiHFU224 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -50 thJA a (PCB mount) C/W Maximum junction-to-ambient R - 110 thJA Maximum junction-to-case R -3.0 thJC Note a. When mounted on 1 square PCB ( FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 250 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.36 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 250 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 200 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 2.3 A -- 1.1 DS(on) GS D b Forward transconductance g V = 50 V, I = 2.3 A 1.5 - - S fs DS D Dynamic Input capacitance C - 260 - iss V = 0 V, GS Output capacitance C -7V = 25 V, 7- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -15- rss Total gate charge Q -- 14 g = 4.4 A, V = 200 V, I D DS Gate-source charge Q --V = 10 V 2.7 nC gs GS b, c see fig. 6 and 13 Gate-drain charge Q --7.8 gd Turn-on delay time t -7.0 - d(on) Rise time t V = 125 V, I = 4.4 A, -13 - r DD D ns R = 18 , R = 28 , G D Turn-off delay time t -20- d(off) b, c see fig. 10 Fall time t -12- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal source inductance L -7.5 - die contact S S Drain-Source Body Diode Characteristics MOSFET symbol D -- 3.8 Continuous source-drain diode current I S showing the A integral reverse G a Pulsed diode forward current I -- 15 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 3.8 A, V = 0 V -- 1.8 V SD J S GS Body diode reverse recovery time t - 200 400 ns rr b T = 25 C, I = 4.4 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.93 1.9 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0373-Rev. D, 19-Apr-2021 Document Number: 91271 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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