IRFR310, IRFU310, SiHFR310, SiHFU310 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 400 DS Repetitive Avalanche Rated R ( )V = 10 V 3.6 Surface Mount (IRFR310, SiHFR310) DS(on) GS Straight Lead (IRFU310, SiHFU310) Q (Max.) (nC) 12 g Available in Tape and Reel Q (nC) 1.9 gs Fast Switching Q (nC) 6.5 gd Fully Avalanche Rated Configuration Single Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 D DPAK IPAK DESCRIPTION (TO-252) (TO-251) Third generation power MOSFETs form Vishay provide the D designer with the best combination of fast switching, D G ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor S G S D phase, infrared, or wave soldering techniques. The straight G S lead version (IRFU, SiHFU series) is for through-hole N-Channel MOSFET mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHFR310-GE3 SiHFR310TRL-GE3 SiHFR310TR-GE3 SiHFR310TRR-GE3 SiHFU310-GE3 a a a IRFR310PbF IRFR310TRLPbF IRFR310TRPbF IRFR310TRRPbF IRFU310PbF Lead (Pb)-free a a a SiHFR310-E3 SiHFR310TL-E3 SiHFR310T-E3 SiHFR310TR-E3 SiHFU310-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 20 GS T = 25 C 1.7 C Continuous Drain Current V at 10 V I GS D T = 100 C 1.1 A C a Pulsed Drain Current I 6.0 DM Linear Derating Factor 0.20 W/C e Linear Derating Factor (PCB Mount) 0.020 b Single Pulse Avalanche Energy E 86 mJ AS a Repetitive Avalanche Current I 1.7 A AR a Repetitive Avalanche Energy E 2.5 mJ AR Maximum Power Dissipation T = 25 C 25 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.5 A c Peak Diode Recovery dV/dt dV/dt 4.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 52 mH, R = 25 , I = 1.7 A (see fig. 12). DD J g AS c. I 1.7 A, dI/dt 40 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S13-0165-Rev. D, 04-Feb-13 Document Number: 91272 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR310, IRFU310, SiHFR310, SiHFU310 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -50 thJA a (PCB Mounted, steady-state) C/W Maximum Junction-to-Ambient R - 110 thJA Maximum Junction-to-Case R -5.0 thJC Note a. When mounted on 1 square PCB ( FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.47 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 1.0 A -- 3.6 DS(on) GS D b Forward Transconductance g V = 50 V, I = 1.0 A 0.97 - - S fs DS D Dynamic Input Capacitance C - 170 - iss V = 0 V, GS Output Capacitance C -3V = 25 V, 4- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -6.3- rss Total Gate Charge Q -- 12 g = 2.0 A, V = 320 V, I D DS Gate-Source Charge Q --V = 10 V 1.9 nC gs GS b, c see fig. 6 and 13 Gate-Drain Charge Q --6.5 gd Turn-On Delay Time t -7.9 - d(on) Rise Time t V = 200 V, I = 2.0 A, -9.9 - r DD D ns R = 24 , R = 95 , g D Turn-Off Delay Time t -21- d(off) b, c see fig. 10 Fall Time t -11- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D -- 1.7 Continuous Source-Drain Diode Current I S showing the A G integral reverse a Pulsed Diode Forward Current I -- 6.0 S SM p - n junction diode b Body Diode Voltage V T = 25 C, I = 1.7 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 240 540 ns rr b T = 25 C, I = 2.0 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.85 1.6 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S13-0165-Rev. D, 04-Feb-13 Document Number: 91272 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000