IRFR420, IRFU420, SiHFR420, SiHFU420 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) 500 DS Repetitive avalanche rated R ( )V = 10 V 3.0 DS(on) GS Surface mount (IRFR420, SiHFR420) Q max. (nC) 19 g Q (nC) 3.3 Straight lead (IRFU420, SiHFU420) gs Available Q (nC) 13 gd Available in tape and reel Configuration Single Fast switching D Ease of paralleling Material categorization: for definitions of compliance DPAK IPAK please see www.vishay.com/doc 99912 (TO-252) (TO-251) D D DESCRIPTION G Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, S G S D ruggedized device design, low on-resistance and G S cost-effectiveness. N-Channel MOSFET The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a a a Lead (Pb)-free and Halogen-free SiHFR420-GE3 SiHFR420TR-GE3 SiHFR420TRL-GE3 SiHFR420TRR-GE3 SiHFU420-GE3 a a a Lead (Pb)-free IRFR420PbF IRFR420TRPbF IRFR420TRLPbF IRFR420TRRPbF IRFU420PbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 20 GS T = 25 C 2.4 C Continuous Drain Current V at 10 V I GS D T = 100 C 1.5 A C a Pulsed Drain Current I 8.0 DM Linear Derating Factor 0.33 W/C e Linear Derating Factor (PCB mount) 0.020 b Single Pulse Avalanche Energy E 400 mJ AS a Repetitive Avalanche Current I 2.4 A AR a Repetitive Avalanche Energy E 4.2 mJ AR Maximum Power Dissipation T = 25 C 42 C P W D e Maximum Power Dissipation (PCB mount) T = 25 C 2.5 A c Peak Diode Recovery dV/dt dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 124 mH, R = 25 , I = 2.4 A (see fig. 12). DD J g AS c. I 2.4 A, dI/dt 50 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S16-1522-Rev. E, 08-Aug-16 Document Number: 91275 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR420, IRFU420, SiHFR420, SiHFU420 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYPMAX.UNIT Maximum Junction-to-Ambient R - 110 thJA a Maximum Junction-to-Ambient (PCB mount) R -50 C/W thJA Maximum Junction-to-Case (Drain) R -3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.59 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I =1.4 A -- 3.0 DS(on) GS D Forward Transconductance g V = 50 V, I = 1.4 A 1.5 - - S fs DS D Dynamic Input Capacitance C - 360 - iss V = 0 V, GS Output Capacitance C -9V = 25 V, 2- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -37- rss Total Gate Charge Q -- 19 g I = 2.1 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 3.3 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --13 gd Turn-On Delay Time t -8.0 - d(on) Rise Time t -8.6 - r V = 250 V, I = 2.1 A, DD D ns b R = 18 , R = 120 , see fig. 10 Turn-Off Delay Time t -3g D 3- d(off) Fall Time t -16- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 2.4 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 8.0 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 2.4 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 260 520 ns rr b T = 25 C, I = 2.1 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.70 1.4 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-1522-Rev. E, 08-Aug-16 Document Number: 91275 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000