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X-On Electronics has gained recognition as a prominent supplier of IRFR420TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFR420TRPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFR420TRPBF Vishay

Hot IRFR420TRPBF electronic component of Vishay
IRFR420TRPBF Vishay
IRFR420TRPBF MOSFETs
IRFR420TRPBF  Semiconductors

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See Product Specifications
Part No. IRFR420TRPBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 500 V 2.4A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
Datasheet: IRFR420TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7787 ea
Line Total: USD 0.78 
Availability - 1972
Ship by Thu. 13 Mar to Tue. 18 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1972
Ship by Thu. 13 Mar to Tue. 18 Mar
MOQ : 1
Multiples : 1
1 : USD 0.7787
10 : USD 0.6919
30 : USD 0.5559
100 : USD 0.4668
500 : USD 0.3961
1000 : USD 0.385

11985
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 1.325
10 : USD 0.9012
100 : USD 0.6622
500 : USD 0.6413
2000 : USD 0.6413

1851
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 1.498
10 : USD 1.169
37 : USD 0.4774
102 : USD 0.4522

58200
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 2000
Multiples : 2000
2000 : USD 0.4868

828
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 90
Multiples : 1
90 : USD 0.7207
91 : USD 0.7136
103 : USD 0.6337
250 : USD 0.6282
500 : USD 0.5113

   
Manufacturer
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RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
 
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We are delighted to provide the IRFR420TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFR420TRPBF and other electronic components in the MOSFETs category and beyond.

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IRFR420, IRFU420, SiHFR420, SiHFU420 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) 500 DS Repetitive avalanche rated R ( )V = 10 V 3.0 DS(on) GS Surface mount (IRFR420, SiHFR420) Q max. (nC) 19 g Q (nC) 3.3 Straight lead (IRFU420, SiHFU420) gs Available Q (nC) 13 gd Available in tape and reel Configuration Single Fast switching D Ease of paralleling Material categorization: for definitions of compliance DPAK IPAK please see www.vishay.com/doc 99912 (TO-252) (TO-251) D D DESCRIPTION G Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, S G S D ruggedized device design, low on-resistance and G S cost-effectiveness. N-Channel MOSFET The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a a a Lead (Pb)-free and Halogen-free SiHFR420-GE3 SiHFR420TR-GE3 SiHFR420TRL-GE3 SiHFR420TRR-GE3 SiHFU420-GE3 a a a Lead (Pb)-free IRFR420PbF IRFR420TRPbF IRFR420TRLPbF IRFR420TRRPbF IRFU420PbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 20 GS T = 25 C 2.4 C Continuous Drain Current V at 10 V I GS D T = 100 C 1.5 A C a Pulsed Drain Current I 8.0 DM Linear Derating Factor 0.33 W/C e Linear Derating Factor (PCB mount) 0.020 b Single Pulse Avalanche Energy E 400 mJ AS a Repetitive Avalanche Current I 2.4 A AR a Repetitive Avalanche Energy E 4.2 mJ AR Maximum Power Dissipation T = 25 C 42 C P W D e Maximum Power Dissipation (PCB mount) T = 25 C 2.5 A c Peak Diode Recovery dV/dt dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 124 mH, R = 25 , I = 2.4 A (see fig. 12). DD J g AS c. I 2.4 A, dI/dt 50 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S16-1522-Rev. E, 08-Aug-16 Document Number: 91275 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR420, IRFU420, SiHFR420, SiHFU420 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYPMAX.UNIT Maximum Junction-to-Ambient R - 110 thJA a Maximum Junction-to-Ambient (PCB mount) R -50 C/W thJA Maximum Junction-to-Case (Drain) R -3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.59 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I =1.4 A -- 3.0 DS(on) GS D Forward Transconductance g V = 50 V, I = 1.4 A 1.5 - - S fs DS D Dynamic Input Capacitance C - 360 - iss V = 0 V, GS Output Capacitance C -9V = 25 V, 2- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -37- rss Total Gate Charge Q -- 19 g I = 2.1 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 3.3 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --13 gd Turn-On Delay Time t -8.0 - d(on) Rise Time t -8.6 - r V = 250 V, I = 2.1 A, DD D ns b R = 18 , R = 120 , see fig. 10 Turn-Off Delay Time t -3g D 3- d(off) Fall Time t -16- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 2.4 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 8.0 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 2.4 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 260 520 ns rr b T = 25 C, I = 2.1 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.70 1.4 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-1522-Rev. E, 08-Aug-16 Document Number: 91275 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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