IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) -60 DS Repetitive avalanche rated R ( )V = -10 V 0.50 Surface mount (IRFR9014, SiHFR9014) DS(on) GS Straight lead (IRFU9014, SiHFU9014) Q max. (nC) 12 g Available in tape and reel Q (nC) 3.8 gs Available P-channel Q (nC) 5.1 gd Fast switching Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 S DESCRIPTION DPAK IPAK Third generation power MOSFETs from Vishay provide the (TO-252) (TO-251) designer with the best combination of fast switching, G D ruggedized device design, low on-resistance and D cost-effectiveness. The DPAK is designed for surface mounting using vapor S G S phase, infrared, or wave soldering techniques. The straight D G lead version (IRFU, SiHFU series) is for through-hole D mounting applications. Power dissipation levels up to 1.5 W P-Channel MOSFET are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a a Lead (Pb)-free and Halogen-free SiHFR9014-GE3 SiHFR9014TRL-GE3 SiHFR9014TR-GE3 SiHFU9014-GE3 a a Lead (Pb)-free IRFR9014PbF IRFR9014TRLPbF IRFR9014TRPbF IRFU9014PbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -60 DS V 20 Gate-Source Voltage V GS T = 25 C -5.1 C Continuous Drain Current V at 5.0 V I GS D T = 100 C -3.2 A C a Pulsed Drain Current I -20 DM Linear Derating Factor 0.20 W/C e Linear Derating Factor (PCB mount) 0.020 b Single Pulse Avalanche Energy E 140 mJ AS a Repetitive Avalanche Current I -5.1 A AR a Repetitive Avalanche Energy E 2.5 mJ AR Maximum Power Dissipation T = 25 C 25 C P W D e Maximum Power Dissipation (PCB mount) T = 25 C 2.5 A c Peak Diode Recovery dV/dt dV/dt -4.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 6.3 mH, R = 25 , I = - 5.1 A (see fig. 12). DD J g AS c. I - 6.7 A, dI/dt 90 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S16-0015-Rev. E, 18-Jan-16 Document Number: 91277 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R - - 110 thJA Maximum Junction-to-Ambient R -- 50 C/W thJA a (PCB mount) Maximum Junction-to-Case (Drain) R -- 5.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A -60 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = -1 mA - -0.059 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = -60 V, V = 0 V - - -100 DS GS Zero Gate Voltage Drain Current I A DSS V = -48 V, V = 0 V, T = 125 C - - -500 DS GS J b Drain-Source On-State Resistance R V = -10 V I = -3.1 A - - 0.50 DS(on) GS D b Forward Transconductance g V = -25 V, I = -3.1 A 1.4 - - S fs DS D Dynamic Input Capacitance C - 270 - iss V = 0 V, GS Output Capacitance C -V = - 25 V, 170- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -31- rss Total Gate Charge Q -- 12 g I = -6.7 A, V = -48 V, D DS Gate-Source Charge Q --V = - 10 V 3.8 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --5.1 gd Turn-On Delay Time t -11 - d(on) Rise Time t -63 - r V = -30 V, I = -6.7 A, DD D ns b R = 24 , R = 4.0 , see fig. 10 g D Turn-Off Delay Time t -9.6- d(off) Fall Time t -31- f D Internal Drain Inductance L Between lead, -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - S c die contact S Drain-Source Body Diode Characteristics D Continuous Source-Drain Diode Current I MOSFET symbol -- -5.1 S showing the A G a integral reverse Pulsed Diode Forward Current I -- -20 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I = -5.1 A, V = 0 V -- -5.5 V SD J S GS Body Diode Reverse Recovery Time t - 80 160 ns rr b T = 25 C, I = -6.7 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.096 0.19 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-0015-Rev. E, 18-Jan-16 Document Number: 91277 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000