IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) - 100 DS Repetitive Avalanche Rated R ( )V = - 10 V 1.2 DS(on) GS Surface Mount (IRFR9110, SiHFR9110) Q (Max.) (nC) 8.7 g Straight Lead (IRFU9110, SiHFU9110) Q (nC) 2.2 gs Available in Tape and Reel Q (nC) 4.1 gd P-Channel Configuration Single Fast Switching S Material categorization: For definitions of compliance DPAK IPAK please see www.vishay.com/doc 99912 (TO-252) (TO-251) D DESCRIPTION G D Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, S G S ruggedized device design, low on-resistance and D G cost-effictiveness. The DPAK is designed for surface mounting using vapor D phase, infrared, or wave soldering techniques. The straight P-Channel MOSFET lead version (IRFU, SiHFU Series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHFR9110-GE3 SiHFR9110TRL-GE3 SiHFR9110TR-GE3 SiHFU9110-GE3 a a IRFR9110PbF IRFR9110TRLPbF IRFR9110TRPbF IRFU9110PbF Lead (Pb)-free a a SiHFR9110-E3 SiHFR9110TL-E3 SiHFR9110T-E3 SiHFU9110-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 100 DS V Gate-Source Voltage V 20 GS T = 25 C - 3.1 C Continuous Drain Current V at - 10 V I GS D T = 100 C - 2.0 A C a Pulsed Drain Current I - 12 DM Linear Derating Factor 0.20 W/C e Linear Derating Factor (PCB Mount) 0.020 b Single Pulse Avalanche Energy E 140 mJ AS a Repetitive Avalanche Current I - 3.1 A AR a Repetitive Avalanche Energy E 2.5 mJ AR Maximum Power Dissipation T = 25 C 25 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.5 A c Peak Diode Recovery dV/dt dV/dt - 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 21 mH, R = 25 , I = - 3.1 A (see fig. 12). DD J g AS c. I - 4.0 A, dI/dt 75 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S13-0168-Rev. D, 04-Feb-13 Document Number: 91279 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R - - 110 thJA Maximum Junction-to-Ambient R -- 50 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -- 5.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A - 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - - 0.093 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = - 100 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = - 80 V, V = 0 V, T = 125 C - - - 500 DS GS J b Drain-Source On-State Resistance R V = - 10 V I = - 1.9 A -- 1.2 DS(on) GS D Forward Transconductance g V = - 50 V, I = - 1.9 A 0.97 - - S fs DS D Dynamic Input Capacitance C - 200 - iss V = 0 V, GS Output Capacitance C -9V = - 25 V, 4- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -18- rss Total Gate Charge Q -- 8.7 g I = - 4.0 A, V = - 80 V, D DS Gate-Source Charge Q --V = - 10 V 2.2 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --4.1 gd Turn-On Delay Time t -10 - d(on) Rise Time t -27 - r V = - 50 V, I = - 4.0 A, DD D ns b R = 24 , R = 11 , see fig. 10 g D Turn-Off Delay Time t -15- d(off) Fall Time t -17- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- - 3.1 S showing the A G integral reverse a Pulsed Diode Forward Current I -- - 12 S SM p - n junction diode b Body Diode Voltage V T = 25 C, I = - 3.1 A, V = 0 V -- - 5.5 V SD J S GS Body Diode Reverse Recovery Time t - 80 160 ns rr b T = 25 C, I = - 4.0 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.17 0.30 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S13-0168-Rev. D, 04-Feb-13 Document Number: 91279 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000