DMPH4015SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Rated to +175C Ideal for High Ambient Temperature I D BV R Environments DSS DS(ON) Max T = +25C A 100% Unclamped Inductive Switch (UIS) Test in Production Low On-Resistance -11.4A 11m V = -10V GS -40V Low Input Capacitance 15m V = -4.5V -9.8A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Description Datasheet (DMPH4015SSSQ) This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(ON) making it ideal for high-efficiency power management applications. Mechanical Data Case: SO-8 Applications Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections: See Diagram Analog Switch Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) D SO-8 S D S D G S D G D Top View S Top View Equivalent Circuit Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMPH4015SSS-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMPH4015SSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -40 V DSS Gate-Source Voltage V 25 V GSS Steady T = +25C -11.4 A Continuous Drain Current (Note 6) V = -10V I A GS D State -8.1 T = +100C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -85 A I DM Maximum Body Diode Continuous Current (Note 6) -3 A I S Avalanche Current (Note 7) L = 1mH -22 A I AS Avalanche Energy (Note 7) L = 1mH 260 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.4 W PD Thermal Resistance, Junction to Ambient (Note 5) 90 C/W R JA Total Power Dissipation (Note 6) 1.8 W P D Thermal Resistance, Junction to Ambient (Note 6) 70 C/W R JA Thermal Resistance, Junction to Case (Note 6) 7.0 C/W R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -40 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -40V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 25V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -1.5 -2.5 V V V = V , I = -250A GS(TH) DS GS D 9 11 V = -10V, I = -9.8A GS D Static Drain-Source On-Resistance R m DS(ON) 11 15 V = -4.5V, I = -9.8A GS D Forward Transfer Admittance Y 26 S V = -20V, I = -9.8A fs DS D Diode Forward Voltage V -0.7 -1 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 4,234 iss V = -20V, V = 0V DS GS Output Capacitance C 1,036 pF oss f = 1MHz Reverse Transfer Capacitance C 526 rss Gate Resistance R 7.8 V = 0V, V = 0V, f = 1MHz G DS GS 42.7 Total Gate Charge (V = -4.5V) Q GS g 91 Total Gate Charge (V = -10V) Q GS g nC V = -20V, I = -9.8A DS D Gate-Source Charge 14.2 Q gs Gate-Drain Charge 13.5 Q gd Turn-On Delay Time t 13.2 D(ON) Turn-On Rise Time t 10 V = -10V, V = -20V, R = 6, R GS DD G ns Turn-Off Delay Time t 303 I = -1A, R = 20 D(OFF) D L Turn-Off Fall Time t 138 F 26 Reverse Recovery Time t ns I = -9.8A, di/dt = -100A/s RR F 20 Reverse Recovery Charge Q nC I = -9.8A, di/dt = -100A/s RR F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMPH4015SSS January 2017 Diodes Incorporated www.diodes.com Document number: DS38003 Rev. 2 - 2 NEW PRODUCT