DMN3013LFG Green 30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type D) Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production Low On-Resistance Device BV R Max DSS DS(ON) Low Input Capacitance Q1 30V 14.3m V = 8V, I = 4A Fast Switching Speed GS D Lead-Free Finish RoHS Compliant (Note 1 & 2) Q2 30V 14.3m V = 8V, I = 4A GS D Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(ON) Case: PowerDI 3333-8 (Type D) making it ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections: See Diagram Analog Switch Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.044 grams (Approximate) PowerDI3333-8 (Type D) Pin1 Top View Pin Configuration Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging DMN3013LFG-7 PowerDI3333-8 (Type D) 1000 / Tape & Reel DMN3013LFG-13 PowerDI3333-8 (Type D) 3000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMN3013LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Q1 Q2 Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 10 V GSS T = +25C 15 C A I D 12 T = +70C C Continuous Drain Current V = 5V GS T = +25C 9.5 A I A D 7.6 T = +70C A Continuous Source-Drain Diode Current (Note 5) I 2.7 2.7 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 80 A DM Avalanche Current (Note 6) L = 0.1mH 24 24 A IAS Avalanche Energy (Note 6) L = 0.1mH 28 28 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 2.16 T = +25C A Total Power Dissipation W P D 1.25 T = +70C A Steady State 58.8 Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 34 C/W 6.9 Thermal Resistance, Junction to Case R JC -55 to +150 Operating and Storage Temperature Range T T C J, STG Electrical Characteristics Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 - - V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I - - 1 A V = 20V, V = 0V DSS DS GS Gate-Source Leakage I - - 100 nA V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.75 0.95 1.2 V V V = V , I = 250A GS(TH) DS GS D - 10.9 14.3 m V = 8V, I = 4A GS D Static Drain-Source On-Resistance - 13.3 16.1 R m V = 4.5V, I = 4A DS(ON) GS D - 15.3 17.7 m V = 3.5V, I = 4A GS D Forward Transfer Admittance - 13 - s Y V = 15V, I =4A fs DS D Diode Forward Voltage V - 0.8 1.0 V V = 0V, I = 4A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 387 Input Capacitance C - 600 iss V = 15V, V = 0V, DS GS 219 Output Capacitance C - 350 pF oss f = 1.0MHz 10.4 Reverse Transfer Capacitance C - 16 rss V = 0V, V = 0V, f = DS GS Gate Resistance R - 3.3 6.8 g 1.0MHz - 3.3 5.7 Total Gate Charge (V = 4.5V) Q GS g - 0.37 - Total Gate Charge at V Q TH g(TH) nC V = 15V, I = 4A DS D Gate-Source Charge - 0.6 - Q gs Gate-Drain Charge - 0.6 - Q gd 4.2 Turn-On Delay Time t - 6.3 D(ON) 6.2 Turn-On Rise Time t - - R V = 15V, V = 4.5V, DD GS ns 9.7 Turn-Off Delay Time t - 15 I = 4A, R = 2, D(OFF) D g 2.0 Turn-Off Fall Time t - - F Reverse Recovery Time - 11.7 - ns tRR V = 15V,I = 4A, di/dt = DS F Reverse Recovery Charge - 7.5 - nC 300A/s Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 10 DMN3013LFG May 2018 Diodes Incorporated www.diodes.com Document number: DS40407 Rev. 2 - 2 NEW PRODUCT ADVANCE INFORMATION