TSM900N06 60V N-Channel Power MOSFET TO-251S TO-252 Key Parameter Performance Pin Definition: (IPAK SL) (DPAK) 1. Gate Parameter Value Unit 2. Drain 3. Source V 60 V DS V = 10V 90 GS R (max) m DS(on) V = 4.5V GS 100 Q 9.3 nC g SOT-223 Block Diagram Ordering Information Part No. Package Packing TSM900N06CH X0G TO-251S 75pcs / Tube TSM900N06CP ROG TO-252 2.5kpcs / 13 Reel TSM900N06CW RPG SOT-223 2.5kpcs / 13 Reel Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET Absolute Maximum Ratings (Tc = 25C unless otherwise noted) Limit Parameter Symbol Unit IPAK DPAK SOT-223 Drain-Source Voltage V 60 V DS 20 Gate-Source Voltage V V GS 11 Tc=25C A (Note 1) Continuous Drain Current I D 7 Tc=100C A (Note 1) 44 Pulsed Drain Current I A DM (Note 3) Single Pulse Avalanche Energy E 25 mJ AS (Note 3) 7 Single Pulse Avalanche Current I A AS T =25C 25 25 4.17 W Total Power C P D Dissipation Derate above T =25C 0.2 0.2 0.014 W/C C Operating Junction Temperature T 150 C J -55 to +150 Storage Temperature Range T C STG 1/8 Version: C1612 TSM900N06 60V N-Channel Power MOSFET Thermal Performance Limit Parameter Symbol Unit IPAK DPAK SOT-223 Thermal Resistance - Junction to Case R 5 5 30 C/W JC Thermal Resistance - Junction to Ambient R 62 62 70 C/W JA Electrical Specifications (T = 25C unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 60 -- -- V GS D DSS V = 10V, I = 6A -- 76 90 GS D Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 3A -- 87 100 GS D Gate Threshold Voltage V = V , I = 250A V 1.2 1.8 2.5 V DS GS D GS(TH) V = 60V, V = 0V -- -- 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 48V, T = 125C -- -- 10 DS J Gate Body Leakage V = 20V, V = 0V I -- -- 100 A GS DS GSS Forward Transconductance V = 10V, I = 3A g -- 4 -- S DS D fs Dynamic (Note 4,5) 9.3 Total Gate Charge Q -- -- g V = 48V, I = 6A, DS D (Note 4,5) 2.1 Gate-Source Charge Q -- -- nC gs V = 10V GS (Note 4,5) 1.8 Gate-Drain Charge Q -- -- gd 500 Input Capacitance C -- -- iss V = 15V, V = 0V, DS GS 45 Output Capacitance C -- -- pF oss f = 1MHz 16 Reverse Transfer Capacitance C -- -- rss Gate Resistance V =0V, V =0V, f=1MHz R -- 2 -- GS DS g Switching (Note 4,5) 2.9 Turn-On Delay Time t -- -- d(on) (Note 4,5) 9.5 Turn-On Rise Time t -- -- V = 30V , V = 10V , DD GS r ns (Note 4,5) R = 3.3, I = -1A G D 18.4 Turn-Off Delay Time t -- -- d(off) (Note 4,5) 5.3 Turn-Off Fall Time t -- -- f Source-Drain Diode Ratings and Characteristic Continuous Drain-Source Diode I -- -- 11 A S V = V = 0V, Force Current G D Pulse Drain-Source Diode I -- -- 44 A SM Diode-Source Forward Voltage V = 0V, I = 1A V -- -- 1.2 V GS S SD (Note 4) Reverse Recovery Time V = 30V, I = 1A t -- 23.2 -- ns GS S rr (Note 4) dI /dt = 100A/s Reverse Recovery Charge Q -- 14.3 -- nC F rr Note: 1. Limited by maximum junction temperature. 2. Repetitive Rating : Pulsed width limited by maximum junction temperature. 3. V =25V,V =10V,L=1mH,I =7A.,R =25,Starting T = 25C DD GS AS G J 4. Pulse test: pulse width 300s, duty cycle 2% 5. Essentially independent of operating temperature. 2/8 Version: C1612