DMPH4025SFVWQ 40V 175C P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Rated to +175CIdeal for High Ambient Temperature I Max D BV R Max DSS DS(ON) T = +25C Environments C Low R Ensures Minimal On-State Losses DS(ON) 25m V = -10V -40A GS Small Form Factor Thermally Efficient Package Enables Higher -40V Density End Products -30A 45m VGS = -4.5V Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data Case: PowerDI 3333-8 (SWP) (Type UX) This MOSFET is designed to meet the stringent requirements of Case Material: Molded Plastic,Gree Molding Compound. automotive applications. It is qualified to AEC-Q101, supported by a UL Flammability Classification Rating 94V-0 PPAP, and is ideal for use in: Moisture Sensitivity: Level 1 per J-STD-020 Reverse-Polarity Protection Terminal Connections Indicator: See Diagram Power-Management Functions Terminals: FinishMatte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 (SWP) (Type UX) D D D D D G G S S S Pin1 S Top View Bottom View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMPH4025SFVWQ-7 2000/Tape & Reel PowerDI3333-8 (SWP) (Type UX) DMPH4025SFVWQ-13 3000/Tape & Reel PowerDI3333-8 (SWP) (Type UX) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMPH4025SFVWQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -40 V DSS Gate-Source Voltage V 20 V GSS T = +25C A -8.7 A I D -7.3 T = +70C A Continuous Drain Current (Note 6) V = -10V GS T = +25C -40 C I D A -33 T = +70C (Package Limit) C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -80 A DM Maximum Continuous Body Diode Forward Current I -3 A S Pulsed Source Current (10s Pulse, Duty Cycle = 1%) -80 A I SM Avalanche Current, L = 0.3mH -23 A I AS Avalanche Energy, L = 0.3mH 82 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 2.3 W T = +25C A Total Power Dissipation (Note 6) P D 60 W T = +25C C Thermal Resistance, Junction to Ambient (Note 6) Steady State 53 R JA C/W Thermal Resistance, Junction to Case (Note 6) R 2.5 JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -40 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -40V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.8 -1.8 V V = V , I = -250A GS(TH) DS GS D 18 25 V = -10V, I = -30A GS D Static Drain-Source On-Resistance m R DS(ON) 23 45 V = -4.5V, I = -15A GS D Diode Forward Voltage -1 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 1918 pF C iss V = -20V, V = 0V, DS GS Output Capacitance 390 pF C oss f = 1MHz Reverse Transfer Capacitance 151 pF C rss Gate Resistance 5.76 R V = 0V, V = 0V, f = 1MHz g DS GS 19.6 nC Total Gate Charge (V = -4.5V) Q GS g 38.6 Total Gate Charge (V = -10V) Q nC GS g V = -20V, I = -3A DS D 3.7 Gate-Source Charge Q nC gs 7.3 Gate-Drain Charge Q nC gd 4.8 Turn-On Delay Time t ns D(ON) 14.2 Turn-On Rise Time ns tR V = -20V, V = -10V, DD GS Turn-Off Delay Time 72.2 ns I = -3A t D D(OFF) Turn-Off Fall Time 35.9 ns t F Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMPH4025SFVWQ May 2018 Diodes Incorporated www.diodes.com Document number: DS39847 Rev. 5 - 2 ADVANCE INFORMATION ADVANCED INFORMATION