X-On Electronics has gained recognition as a prominent supplier of DMPH4025SFVWQ-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMPH4025SFVWQ-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMPH4025SFVWQ-13 Diodes Incorporated

DMPH4025SFVWQ-13 electronic component of Diodes Incorporated
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Part No.DMPH4025SFVWQ-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 31V-40V
Datasheet: DMPH4025SFVWQ-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.081 ea
Line Total: USD 1.08 
Availability - 2819
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2819
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.081
10 : USD 0.7774
100 : USD 0.5394
500 : USD 0.4313
1000 : USD 0.4267
3000 : USD 0.399
6000 : USD 0.3887

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the DMPH4025SFVWQ-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMPH4025SFVWQ-13 and other electronic components in the MOSFETs category and beyond.

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DMPH4025SFVWQ 40V 175C P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Rated to +175CIdeal for High Ambient Temperature I Max D BV R Max DSS DS(ON) T = +25C Environments C Low R Ensures Minimal On-State Losses DS(ON) 25m V = -10V -40A GS Small Form Factor Thermally Efficient Package Enables Higher -40V Density End Products -30A 45m VGS = -4.5V Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data Case: PowerDI 3333-8 (SWP) (Type UX) This MOSFET is designed to meet the stringent requirements of Case Material: Molded Plastic,Gree Molding Compound. automotive applications. It is qualified to AEC-Q101, supported by a UL Flammability Classification Rating 94V-0 PPAP, and is ideal for use in: Moisture Sensitivity: Level 1 per J-STD-020 Reverse-Polarity Protection Terminal Connections Indicator: See Diagram Power-Management Functions Terminals: FinishMatte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 (SWP) (Type UX) D D D D D G G S S S Pin1 S Top View Bottom View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMPH4025SFVWQ-7 2000/Tape & Reel PowerDI3333-8 (SWP) (Type UX) DMPH4025SFVWQ-13 3000/Tape & Reel PowerDI3333-8 (SWP) (Type UX) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMPH4025SFVWQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -40 V DSS Gate-Source Voltage V 20 V GSS T = +25C A -8.7 A I D -7.3 T = +70C A Continuous Drain Current (Note 6) V = -10V GS T = +25C -40 C I D A -33 T = +70C (Package Limit) C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -80 A DM Maximum Continuous Body Diode Forward Current I -3 A S Pulsed Source Current (10s Pulse, Duty Cycle = 1%) -80 A I SM Avalanche Current, L = 0.3mH -23 A I AS Avalanche Energy, L = 0.3mH 82 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 2.3 W T = +25C A Total Power Dissipation (Note 6) P D 60 W T = +25C C Thermal Resistance, Junction to Ambient (Note 6) Steady State 53 R JA C/W Thermal Resistance, Junction to Case (Note 6) R 2.5 JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -40 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -40V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.8 -1.8 V V = V , I = -250A GS(TH) DS GS D 18 25 V = -10V, I = -30A GS D Static Drain-Source On-Resistance m R DS(ON) 23 45 V = -4.5V, I = -15A GS D Diode Forward Voltage -1 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 1918 pF C iss V = -20V, V = 0V, DS GS Output Capacitance 390 pF C oss f = 1MHz Reverse Transfer Capacitance 151 pF C rss Gate Resistance 5.76 R V = 0V, V = 0V, f = 1MHz g DS GS 19.6 nC Total Gate Charge (V = -4.5V) Q GS g 38.6 Total Gate Charge (V = -10V) Q nC GS g V = -20V, I = -3A DS D 3.7 Gate-Source Charge Q nC gs 7.3 Gate-Drain Charge Q nC gd 4.8 Turn-On Delay Time t ns D(ON) 14.2 Turn-On Rise Time ns tR V = -20V, V = -10V, DD GS Turn-Off Delay Time 72.2 ns I = -3A t D D(OFF) Turn-Off Fall Time 35.9 ns t F Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMPH4025SFVWQ May 2018 Diodes Incorporated www.diodes.com Document number: DS39847 Rev. 5 - 2 ADVANCE INFORMATION ADVANCED INFORMATION

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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