IPB50N12S3L-15 IPI50N12S3L-15, IPP50N12S3L-15 OptiMOS -T Power-Transistor Product Summary V 120 V DS R (SMD version) 15.4 mW DS(on),max I 50 A D Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB50N12S3L-15 PG-TO263-3-2 3N12L15 IPI50N12S3L-15 PG-TO262-3-1 3N12L15 IPP50N12S3L-15 PG-TO220-3-1 3N12L15 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C, V =10V 50 A D C GS T =100C, C 37 1) V =10V GS 1) I T =25C 200 Pulsed drain current D,pulse C 1) E I =25A 330 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 50 A AS V Gate source voltage - 20 V GS P T =25C Power dissipation 100 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg Rev. 1.0 page 1 2016-06-20 IPB50N12S3L-15 IPI50N12S3L-15, IPP50N12S3L-15 Values Parameter Symbol Conditions Unit min. typ. max. 1) Thermal characteristics R Thermal resistance, junction - case - - - 1.5 K/W thJC Thermal resistance, junction - R - - - 62 thJA ambient, leaded SMD version, device on PCB R minimal footprint - - 62 thJA 2 2) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 120 - - V (BR)DSS GS D V V =V , I =60A Gate threshold voltage 1.2 1.7 2.4 GS(th) DS GS D V =120V, V =0V, DS GS Zero gate voltage drain current I - 0.01 0.1 A DSS T =25C j V =120V, V =0V, DS GS - 1 10 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =4.5V, I =50A Drain-source on-state resistance - 16.1 20.9 mW DS(on) GS D V =4.5V, I =50A, GS D - 15.8 20.6 SMD version V =10V, I =50A - 13.1 15.7 GS D V =10V, I =50A, GS D - 12.8 15.4 SMD version Rev. 1.0 page 2 2016-06-20