IRFR3709ZPbF IRFU3709ZPbF Applications HEXFET Power MOSFET High Frequency Synchronous Buck V R max Qg Converters for Computer Processor Power DSS DS(on) High Frequency Isolated DC-DC 30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free Benefits Very Low R at 4.5V V DS(on) GS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR3709ZPbF IRFU3709ZPbF Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 86 I T = 25C A C GS D Continuous Drain Current, V 10V 61 I T = 100C C GS D Pulsed Drain Current I 340 DM P T = 25C Maximum Power Dissipation 79 W D C P T = 100C C Maximum Power Dissipation 39 D Linear Derating Factor 0.53 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.9 C/W JC Junction-to-Ambient (PCB Mount) R 50 JA R Junction-to-Ambient 110 JA Notes through are on page 11 www.irf.com 1 12/2/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 22 mV/C Reference to 25C, I = 1mA D R m DS(on) Static Drain-to-Source On-Resistance 5.2 6.5 V = 10V, I = 15A GS D = 4.5V, I = 12A 6.5 8.2 V GS D V Gate Threshold Voltage 1.35 1.80 2.25 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -5.6 mV/C GS(th) J I DSS Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DS GS 150 V = 24V, V = 0V, T = 150C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 51 S = 15V, I = 12A V DS D Q Total Gate Charge 17 26 g Q gs1 Pre-Vth Gate-to-Source Charge 4.7 V = 15V DS Q gs2 Post-Vth Gate-to-Source Charge 1.6 nC V = 4.5V GS Q gd Gate-to-Drain Charge 5.7 I = 12A D Q godr Gate Charge Overdrive 5.0 See Fig. 16 Q Switch Charge (Q + Q ) sw gs2 gd 7.3 Q Output Charge 10 nC V = 16V, V = 0V oss DS GS t d(on) Turn-On Delay Time 12 V = 16V, V = 4.5V DD GS t r Rise Time 12 I = 12A D t d(off) Turn-Off Delay Time 15 ns Clamped Inductive Load t f Fall Time 3.9 C iss Input Capacitance 2330 V = 0V GS C Output Capacitance 460 pF V = 15V oss DS C rss Reverse Transfer Capacitance 230 = 1.0MHz Avalanche Characteristics Parameter Units Typ. Max. Single Pulse Avalanche Energy E AS 100 mJ I Avalanche Current 12 A AR Repetitive Avalanche Energy E 7.9 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions 86 I D S Continuous Source Current MOSFET symbol (Body Diode) A showing the G I SM Pulsed Source Current 340 integral reverse S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 12A, V = 0V J S GS t rr Reverse Recovery Time 29 44 ns T = 25C, I = 12A, V = 15V DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 25 37 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com