PD- 94061B IRFR3711 SMPS MOSFET IRFU3711 Applications HEXFET Power MOSFET High Frequency Isolated DC-DC V R max I Converters with Synchronous Rectification DSS DS(on) D for Telecom and Industrial Use 20V 6.5m 110A High Frequency Buck Converters for Server Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity 100% R Tested G Benefits Ultra-Low Gate Impedance D-Pak I-Pak IRFR3711 IRFU3711 Very Low RDS(on) at 4.5V V GS Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Symbol Parameter Max Units V Drain-Source Voltage V 20 DS V Gate-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 100 GS D C Continuous Drain Current, V 10V 69 I T = 100C A GS D C Pulsed Drain Current I 440 DM Maximum Power Dissipation P T = 25C 2.5 W A D P T = 25C Maximum Power Dissipation 120 D C 0.96 Linear Derating Factor W/C T , T Junction and Storage Temperature Range -55 to +150 C J STG Thermal Resistance Symbol Parameter Typ Max Units Junction-to-Case R 1.04 JC Junction-to-Ambient (PCB Mount) R 50 C/W JA Junction-to-Ambient R 110 JA Notes through are on page 10 www.irf.com 1 Static T = 25C (unless otherwise specified) J Symbol Parameter Min Typ Max Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A GS D V /T Breakdown Voltage Temp. Coefficient 0.022 V/C Reference to 25C, I = 1mA (BR)DSS J D 5.2 6.5 V = 10V, I = 15A GS D R m Static Drain-to-Source On-Resistance DS(on) 6.7 8.5 V = 4.5V, I = 12A GS D V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D 140 V = 20V, V = 0V DS GS I 20 V = 16V, V = 0V Drain-to-Source Leakage Current A DSS DS GS 100 V = 16V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min Typ Max Units Conditions g Forward Transconductance 53 S V = 16V, I = 30A fs DS D Q Total Gate Charge 29 44 I = 15A g D Q gs Gate-to-Source Charge 7.3 V = 10V DS nC Q Gate-to-Drain Mille) Charge 8.9 V = 4.5V gd GS Q V = 0V, V = 10V oss Output Gate Charge 33 GS DS R Gate Resistance 0.3 2.5 G t d(on) Turn-On Delay Time 12 V = 10V DD t Rise Time 220 I = 30A r D ns t d(off) Turn-Off Delay Time 17 R = 1.8 G t f Fall Time 12 V = 4.5V GS C Input Capacitance 2980 V = 0V iss GS C oss Output Capacitance 1770 pF V = 10V DS C Reverse Transfer Capacitance 280 = 1.0MHz rss Avalanche Characteristics Symbol Parameter Typ Max Units Single Pulse Avalanche Energy E AS 460 mJ I Avalanche Current 30 A AR Diode Characteristics Symbol Parameter Min Typ Max Units Conditions Continuous Source Current MOSFET symbol I 110 S (Body Diode) showing the A Pulsed Source Current integral reverse I 440 SM (Body Diode) p-n junction diode. 0.88 1.3 T = 25C, I = 30A, V = 0V J S GS V Diode Forward Voltage V SD 0.82 T = 125C, I = 30A, V = 0V J S GS t Reverse Recovery Time 50 75 ns T = 25C, I = 16A, V = 10V rr J F R di/dt = 100A/s Q Reverse Recovery Charge 61 92 nC rr t Reverse Recovery Time 48 72 ns T = 125C, I = 16A, V = 10V rr J F R di/dt = 100A/s Q Reverse Recovery Charge 65 98 nC rr 2 www.irf.com