PD - 95521B IRFR3504ZPbF IRFU3504ZPbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance V = 40V DSS 175C Operating Temperature Fast Switching R = 9.0m DS(on) Repetitive Avalanche Allowed up to Tjmax G Lead-Free I = 42A D S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and D-Pak I-Pak reliable device for use in a wide variety of IRFR3504ZPbF IRFU3504ZPbF applications. Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, V 10V (Silicon Limited) I T = 25C 77 GS D C Continuous Drain Current, V 10V I T = 100C 54 A GS D C Continuous Drain Current, V 10V (Package Limited) I T = 25C 42 GS D C Pulsed Drain Current I 310 DM P T = 25C Power Dissipation 90 W D C Linear Derating Factor 0.60 W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy E 77 mJ AS (Thermally limited) Single Pulse Avalanche Energy Tested Value E (Tested ) 110 AS Avalanche Current I See Fig.12a, 12b, 15, 16 A AR Repetitive Avalanche Energy E mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.66 JC Junction-to-Ambient (PCB mount) R 40 C/W JA R Junction-to-Ambient 110 JA HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A GS D V / T Breakdown Voltage Temp. Coefficient 0.032 V/C Reference to 25C, I = 1mA (BR)DSS J D m R DS(on) Static Drain-to-Source On-Resistance 8.23 9.0 V = 10V, I = 42A GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D V = 10V, I = 42A gfs Forward Transconductance 32 S DS D I DSS Drain-to-Source Leakage Current 20 A V = 40V, V = 0V DS GS 250 V = 40V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q g Total Gate Charge 30 45 I = 42A D Q Gate-to-Source Charge 9.6 nC V = 32V gs DS Q gd Gate-to-Drain Mille) Charge 12 V = 10V GS t Turn-On Delay Time 15 V = 20V d(on) DD t r Rise Time 74 I = 42A D t Turn-Off Delay Time 30 ns R = 15 d(off) G t f Fall Time 38 V = 10V GS L Internal Drain Inductance 4.5 Between lead, D D nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact C Input Capacitance 1510 V = 0V iss GS C oss Output Capacitance 340 V = 25V DS C Reverse Transfer Capacitance 190 pF = 1.0MHz rss C oss Output Capacitance 1100 V = 0V, V = 1.0V, = 1.0MHz GS DS C Output Capacitance 340 V = 0V, V = 32V, = 1.0MHz oss GS DS C eff. oss Effective Output Capacitance 460 V = 0V, V = 0V to 32V GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 42 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 310 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 42A, V = 0V SD J S GS t Reverse Recovery Time 18 27 ns T = 25C, I = 42A, V = 20V DD rr J F Q di/dt = 100A/s Reverse Recovery Charge 9.2 14 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com