PD - 94245 IRFR15N20D SMPS MOSFET IRFU15N20D HEXFET Power MOSFET Applications V R max I DSS DS(on) D l High frequency DC-DC converters 200V 0.165 17A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR15N20D IRFU15N20D Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 17 D C GS I T = 100C Continuous Drain Current, V 10V 12 A D C GS I Pulsed Drain Current 68 DM P T = 25C Power Dissipation 140 D C P T = 25C Power Dissipation* 3.0 W D A Linear Derating Factor 0.96 W/C V Gate-to-Source Voltage 30 V GS dv/dt Peak Diode Recovery dv/dt 8.3 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.04 JC R Junction-to-Ambient (PCB mount)* 50 C/W JA R Junction-to-Ambient 110 JA Notes through are on page 10 www.irf.com 1 7/25/01IRFR/U15N20D Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.26 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.165 V = 10V, I = 10A DS(on) GS D V Gate Threshold Voltage 3.0 5.5 V V = V , I = 250A GS(th) DS GS D 25 V = 200V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 160V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 30V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -30V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 4.0 S V = 50V, I = 10A fs DS D Q Total Gate Charge 27 41 I = 10A g D Q Gate-to-Source Charge 6.9 10 nC V = 160V gs DS Q Gate-to-Drain Mille) Charge 14 21 V = 10V, gd GS t Turn-On Delay Time 9.7 V = 100V d(on) DD t Rise Time 32 I = 10A r D ns t Turn-Off Delay Time 17 R = 6.8 d(off) G t Fall Time 8.9 V = 10V f GS C Input Capacitance 910 V = 0V iss GS C Output Capacitance 170 V = 25V oss DS C Reverse Transfer Capacitance 31 pF = 1.0MHz rss C Output Capacitance 1380 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 67 V = 0V, V = 160V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 150 V = 0V, V = 0V to 160V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 260 mJ AS I Avalanche Current 10 A AR E Repetitive Avalanche Energy 14 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 17 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 68 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.5 V T = 25C, I = 10A, V = 0V SD J S GS t Reverse Recovery Time 130 200 ns T = 25C, I = 10A rr J F Q Reverse RecoveryCharge 610 920 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com