IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 250 DS Repetitive Avalanche Rated R ( )V = 10 V 2.0 Surface Mount (IRFR214, SiHFR214) DS(on) GS Straight Lead (IRFU214, SiHFU214) Q (Max.) (nC) 8.2 g Available in Tape and Reel Q (nC) 1.8 gs Fast Switching Q (nC) 4.5 gd Ease of Paralleling Configuration Single Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 D DESCRIPTION DPAK IPAK Third generation power MOSFETs from Vishay provide the (TO-252) (TO-251) designer with the best combination of fast switching, D D G ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor S G S D phase, infrared, or wave soldering techniques. The straight G S lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W N-Channel MOSFET are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHFR214-GE3 SiHFR214TRL-GE3 SiHFR214TR-GE3 SiHFR214TRR-GE3 SiHFU214-GE3 a a IRFR214PbF IRFR214TRLPbF IRFR214TRPbF - IRFU214PbF Lead (Pb)-free a a SiHFR214-E3 SiHFR214TL-E3 SiHFR214T-E3 - SiHFU214-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 250 DS V Gate-Source Voltage V 20 GS T = 25 C 2.2 C Continuous Drain Current V at 10 V I GS D T = 100 C 1.4 A C a Pulsed Drain Current I 8.8 DM Linear Derating Factor 0.20 W/C e Linear Derating Factor (PCB Mount) 0.020 b Single Pulse Avalanche Energy E 190 mJ AS a Repetitive Avalanche Current I 2.2 A AR a Repetitive Avalanche Energy E 2.5 mJ AR Maximum Power Dissipation T = 25 C P 25 W C D e Maximum Power Dissipation (PCB Mount) T = 25 C P 2.5 W A D c Peak Diode Recovery dV/dt dV/dt 4.8 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, Starting T = 25 C, L = 62 mH, R = 25 , I = 2.2 A (see fig. 12). DD J g AS c. I 2.2 A, dI/dt 65 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 Material). S13-0171-Rev. E, 04-Feb-13 Document Number: 91269 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R - - 110 thJA Maximum Junction-to-Ambient R -- 50 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -- 5.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 250 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.39 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 250 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 200 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 1.3 A -- 2.0 DS(on) GS D Forward Transconductance g V = 50 V, I = 1.3 A 0.80 - - S fs DS D Dynamic Input Capacitance C - 140 - iss V = 0 V, GS Output Capacitance C -4V = 25 V, 2- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -9.6- rss Total Gate Charge Q -- 8.2 g I = 2.7 A, V = 200 V, D DS Gate-Source Charge Q --V = 10 V 1.8 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --4.5 gd Turn-On Delay Time t -7.0 - d(on) Rise Time t -7.6 - r V = 125 V, I = 2.7 A, DD D ns b R = 24 , R = 45 , see fig. 10 G D Turn-Off Delay Time t -16- d(off) Fall Time t -7.0- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 2.2 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 8.8 S SM p - n junction diode b Body Diode Voltage V T = 25 C, I = 2.2 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 190 390 ns rr b T = 25 C, I = 2.7 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.65 1.3 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S13-0171-Rev. E, 04-Feb-13 Document Number: 91269 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000