PD - 95943B IRFR2905ZPbF IRFU2905ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V = 55V DSS 175C Operating Temperature Fast Switching R = 14.5m Repetitive Avalanche Allowed up to Tjmax DS(on) G Lead-Free I = 42A D Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of I-Pak D-Pak applications. IRFU2905ZPbF IRFR2905ZPbF Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, V 10V (Silicon Limited) I T = 25C 59 GS D C Continuous Drain Current, V 10V I T = 100C 42 A GS D C (Package Limited) I T = 25C Continuous Drain Current, V 10V GS 42 D C Pulsed Drain Current I 240 DM P T = 25C Power Dissipation 110 W D C Linear Derating Factor 0.72 W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy E AS (Thermally limited) 55 mJ Single Pulse Avalanche Energy Tested Value E (Tested ) 82 AS Avalanche Current I See Fig.12a, 12b, 15, 16 A AR Repetitive Avalanche Energy E AR mJ T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 1.38 JC Junction-to-Ambient (PCB mount) R 40 C/W JA Junction-to-Ambient R 110 JA HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.053 V/C Reference to 25C, I = 1mA D m R DS(on) Static Drain-to-Source On-Resistance 11.1 14.5 V = 10V, I = 36A GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D gfs Forward Transconductance 20 S V = 25V, I = 36A DS D I DSS Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q g Total Gate Charge 29 44 I = 36A D Q Gate-to-Source Charge 7.7 nC V = 44V gs DS Q gd Gate-to-Drain Mille) Charge 12 V = 10V GS R Gate Input Resistance 1.3 f = 1MHz, open drain G t d(on) Turn-On Delay Time 14 V = 28V DD t Rise Time 66 I = 36A r D t d(off) Turn-Off Delay Time 31 ns R = 15 G t Fall Time 35 V = 10V f GS L D Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C iss Input Capacitance 1380 V = 0V GS C oss Output Capacitance 240 V = 25V DS C rss Reverse Transfer Capacitance 120 pF = 1.0MHz C oss Output Capacitance 820 V = 0V, V = 1.0V, = 1.0MHz GS DS C oss Output Capacitance 190 V = 0V, V = 44V, = 1.0MHz GS DS C eff. oss Effective Output Capacitance 300 V = 0V, V = 0V to 44V GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 36 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 240 integral reverse SM p-n junction diode. (Body Diode) V Diode Forward Voltage 1.3 V T = 25C, I = 36A, V = 0V SD J S GS t Reverse Recovery Time 23 35 ns T = 25C, I = 36A, V = 28V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge 16 24 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com